ArticleNature2024
Van der Waals polarity-engineered 3D integration of 2D complementary logic.
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Article in Nature, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 35 papers.
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35citing papers in PubMed
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Who cites it
35 citing papers in PubMed.
- Van der Waals surface reconstruction for oriented epitaxial growth of two-dimensional metallic oxides.Nature materials · 2026Article
- High-Performance and Low-Power Complementary Transistors Based on Red Carbon Ribbon.Molecules (Basel, Switzerland) · 2026Article
- Gate-level three-dimensional integration of two-dimensional logic cells.Nature communications · 2026Article
- Van der Waals strain hardening and large uniform tensile elongation in GaSe.Nature materials · 2026Article
- Wafer-Scale 3D Integration for High-Density Multi-Valued Neuromorphic Logic.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Dual-mode switchable and reconfigurable Van der Waals phototransistor for multi-state image encryption.Light, science & applications · 2026Article
- CMOS-Integrated Synaptic Photoreceptor Chip Inspired by Insect Visual Processing.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Flexural phonon instability defines intrinsic van der Waals elastic limits in the interlayer direction.Nature communications · 2026Article
- Post-Moore two-dimensional integrated electronics for angstrom-nodes.National science review · 2026Review
- Article
- Monolithic integration of p- and n-type doped 2D WSeNature communications · 2026Article
- Towards Artificial Intelligence Hardware With 3D Integrated Ferroelectric Transistors.Small (Weinheim an der Bergstrasse, Germany) · 2026Article
- Borophene: Crucial Challenges and the Way Forward.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Review
- Band Engineering and Structural-Geometrical Engineering in 2D/3D van der Waals Heterostructures for Advanced Photodetection and Intelligent Sensing.Nano-micro letters · 2026Review
- Flat band induced quasi-one-dimensional magnon transport in a two-dimensional spin lattice.Nature communications · 2026Article
- Large-scale gate-all-around MoSNational science review · 2026Article
- van der Waals dielectrics for threshold engineering in two-dimensional field effect transistors.Nature communications · 2026Article
- Near-zero hysteresis van der Waals MnAlCommunications materials · 2026Article
- Fast Growth of Centimeter-Scale Molybdenum Disulfide Single Crystal for Energy-Efficient Logic Circuits.Research (Washington, D.C.) · 2026Article
- Flexible monolithic 3D complementary circuits based on 2D semiconductor inks.Nature communications · 2025Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
31 authors.
Yimeng Guo *Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
Jiangxu Li *Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.ORCID http://orcid.org/0000-0002-4534-4208
Xuepeng Zhan *School of Information Science and Engineering (ISE), Shandong University, Qingdao, People's Republic of China.
Chunwen Wang *School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, People's Republic of China.
Min Li *School of Physical Science and Technology, ShanghaiTech University, Shanghai, China.
Biao ZhangSchool of Materials, Shenzhen Campus of Sun Yat-Sen University, Shenzhen, China.
Zirui WangSchool of Integrated Circuits, Peking University, Beijing, China.
Yueyang LiuState Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences Beijing, Beijing, China.
Kaining YangState Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Optoelectronics, Shanxi University, Taiyuan, China.
Hai WangSchool of Information Science and Engineering (ISE), Shandong University, Qingdao, People's Republic of China.ORCID http://orcid.org/0000-0002-0095-3456
Wanying LiShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
Pingfan GuCollaborative Innovation Center of Quantum Matter, Beijing, China.ORCID http://orcid.org/0000-0002-4203-794X
Zhaoping LuoShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
Yingjia LiuShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
Peitao LiuShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.ORCID http://orcid.org/0000-0002-6950-1386
Bo ChenSchool of Information Science and Engineering (ISE), Shandong University, Qingdao, People's Republic of China.
Kenji WatanabeResearch Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan.ORCID http://orcid.org/0000-0003-3701-8119
Takashi TaniguchiInternational Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan.ORCID http://orcid.org/0000-0002-1467-3105
Xing-Qiu ChenShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.ORCID http://orcid.org/0000-0002-5904-6578
Chengbing QinCollaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China.
Jiezhi ChenSchool of Information Science and Engineering (ISE), Shandong University, Qingdao, People's Republic of China.
Dongming SunShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.ORCID http://orcid.org/0000-0003-1552-7940
Jing ZhangState Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Optoelectronics, Shanxi University, Taiyuan, China.ORCID http://orcid.org/0000-0001-9517-3438
Runsheng WangSchool of Integrated Circuits, Peking University, Beijing, China.
Jianpeng LiuSchool of Physical Science and Technology, ShanghaiTech University, Shanghai, China.ORCID http://orcid.org/0000-0002-8564-0415
Yu YeCollaborative Innovation Center of Quantum Matter, Beijing, China.ORCID http://orcid.org/0000-0001-6046-063X
Xiuyan LiShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China. xyli@imr.ac.cn.ORCID http://orcid.org/0000-0002-6398-4700
Yanglong HouSchool of Materials, Shenzhen Campus of Sun Yat-Sen University, Shenzhen, China. hou@pku.edu.cn.ORCID http://orcid.org/0000-0003-0579-4594
Wu ZhouSchool of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, People's Republic of China. wuzhou@ucas.ac.cn.ORCID http://orcid.org/0000-0002-6803-1095
Hanwen WangLiaoning Academy of Materials, Shenyang, China. hwwang@lam.ln.cn.ORCID http://orcid.org/0000-0003-2212-6205
Zheng HanState Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Optoelectronics, Shanxi University, Taiyuan, China. vitto.han@gmail.com.ORCID http://orcid.org/0000-0001-5721-6206
Funding
No grant is acknowledged in the PubMed record.
Abstract
Vertical three-dimensional integration of two-dimensional (2D) semiconductors holds great promise, as it offers the possibility to scale up logic layers in the z axis
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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.