ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2024
A Plasmonic Optoelectronic Resistive Random-Access Memory for In-Sensor Color Image Cryptography.
Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
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3 citing papers in PubMed.
- HfONanomaterials (Basel, Switzerland) · 2026Article
- Multimodal In-Sensor Computing System Using Integrated Silicon Photonic Convolutional Processor.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024Article
- A Plasmonic Optoelectronic Resistive Random-Access Memory for In-Sensor Color Image Cryptography.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024Article
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13 authors.
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Abstract
The optoelectronic resistive random-access memory (RRAM) with the integrated function of perception, storage and intrinsic randomness displays promising applications in the hardware level in-sensor image cryptography. In this work, 2D hexagonal boron nitride based optoelectronic RRAM is fabricated with semitransparent noble metal (Ag or Au) as top electrodes, which can simultaneous capture color image and generate physically unclonable function (PUF) key for in-sensor color image cryptography. Surface plasmons of noble metals enable the strong light absorption to realize an efficient modulation of filament growth at nanoscale. Resistive switching curves show that the optical stimuli can impede the filament aggregation and promote the filament annihilation, which originates from photothermal effects and photogenerated hot electrons in localized surface plasmon resonance of noble metals. By selecting noble metals, the optoelectronic RRAM array can respond to distinct wavelengths and mimic the biological dichromatic cone cells to perform the color perception. Due to the intrinsic and high-quality randomness, the optoelectronic RRAM can produce a PUF key in every exposure cycle, which can be applied in the reconfigurable cryptography. The findings demonstrate an effective strategy to build optoelectronic RRAM for in-sensor color image cryptography applications.
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