Evidence map›Paper›PMID 38806482›Full record

ArticleNature communications2024

Domain wall magnetic tunnel junction-based artificial synapses and neurons for all-spin neuromorphic hardware.

Long Liu, Di Wang, Dandan Wang, Yan Sun, Huai Lin, Xiliang Gong, Yifan Zhang, Ruifeng Tang, Zhihong Mai, Zhipeng Hou and 7 more

Abstract read
In one paragraph

Article in Nature communications, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 16 papers.

0numbers the graph read from it
0cells of the map it votes in
16citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

16 citing papers in PubMed.

  1. Article
  2. Review
  3. Multi-State Memory in 2D Magnets via Thickness-Engineered Growth.Advanced materials (Deerfield Beach, Fla.) · 2026
    Article
  4. Article
  5. Review
  6. Article
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  8. Article
  9. Leaky-Integrate-Fire Neuron via Synthetic Antiferromagnetic Coupling and Spin-Orbit Torque.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Article
  10. Article
  11. Article
  12. Article
  13. Review
  14. Article
  15. Article
  16. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

17 authors.

Long LiuKey Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.ORCID http://orcid.org/0000-0002-0598-266X
Di WangKey Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.ORCID http://orcid.org/0000-0001-6147-5710
Dandan WangHubei Jiufengshan Laboratory, Wuhan, Hubei, 430206, China. wangdandan@jfslab.com.cn.ORCID http://orcid.org/0000-0003-0876-0277
Yan SunShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China.ORCID http://orcid.org/0000-0002-7142-8552
Huai LinKey Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.ORCID http://orcid.org/0000-0001-7662-2701
Xiliang GongShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China.
Yifan ZhangKey Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
Ruifeng TangKey Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.ORCID http://orcid.org/0000-0002-4997-8494
Zhihong MaiHubei Jiufengshan Laboratory, Wuhan, Hubei, 430206, China.
Zhipeng HouInstitute for Advanced Materials, South China Normal University, Guangzhou, 510006, China.ORCID http://orcid.org/0000-0003-4935-2149
Yumeng YangSchool of Information Science and Technology, ShanghaiTech University, Shanghai, 201210, China.ORCID http://orcid.org/0000-0002-8071-4470
Peng LiSchool of Microelectronics, University of Science and Technology of China, Hefei, 230026, China.ORCID http://orcid.org/0000-0001-8491-0199
Lan WangLab of Low Dimensional Magnetism and Spintronic Devices, School of Physics, Hefei University of Technology, Hefei, 230009, Anhui, China.ORCID http://orcid.org/0000-0001-7124-2718
Qing LuoKey Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.ORCID http://orcid.org/0000-0002-3419-4400
Ling LiKey Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.ORCID http://orcid.org/0000-0002-7622-8752
Guozhong XingKey Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China. gzxing@ime.ac.cn.ORCID http://orcid.org/0000-0002-0618-1960
Ming LiuKey Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China. liuming@ime.ac.cn.ORCID http://orcid.org/0000-0002-0937-7547

Funding

National Natural Science Foundation of China (National Science Foundation of China) 62074164National Natural Science Foundation of China (National Science Foundation of China) 62374180
6 · The paper itself

Abstract

We report a breakthrough in the hardware implementation of energy-efficient all-spin synapse and neuron devices for highly scalable integrated neuromorphic circuits. Our work demonstrates the successful execution of all-spin synapse and activation function generator using domain wall-magnetic tunnel junctions. By harnessing the synergistic effects of spin-orbit torque and interfacial Dzyaloshinskii-Moriya interaction in selectively etched spin-orbit coupling layers, we achieve a programmable multi-state synaptic device with high reliability. Our first-principles calculations confirm that the reduced atomic distance between 5d and 3d atoms enhances Dzyaloshinskii-Moriya interaction, leading to stable domain wall pinning. Our experimental results, supported by visualizing energy landscapes and theoretical simulations, validate the proposed mechanism. Furthermore, we demonstrate a spin-neuron with a sigmoidal activation function, enabling high operation frequency up to 20 MHz and low energy consumption of 508 fJ/operation. A neuron circuit design with a compact sigmoidal cell area and low power consumption is also presented, along with corroborated experimental implementation. Our findings highlight the great potential of domain wall-magnetic tunnel junctions in the development of all-spin neuromorphic computing hardware, offering exciting possibilities for energy-efficient and scalable neural network architectures.

Identifiers

PMID38806482
PMCPMC11133408

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.