Evidence map›Paper›PMID 38793178›Full record

ArticleMicromachines2024

Enhancing the Uniformity of a Memristor Using a Bilayer Dielectric Structure.

Yulin Liu, Qilai Chen, Yanbo Guo, Bingjie Guo, Gang Liu, Yanchao Liu, Lei He, Yutong Li, Jingyan He, Minghua Tang

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Micromachines, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Article
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

10 authors.

Yulin LiuSchool of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China.
Qilai ChenAerospace Science & Industry Shenzhen (Group) Co., Ltd., Shenzhen 518000, China.
Yanbo GuoDepartment of Micro and Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200241, China.
Bingjie GuoDepartment of Micro and Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200241, China.
Gang LiuDepartment of Micro and Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200241, China.
Yanchao LiuShi Changxu Class of the School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China.
Lei HeShi Changxu Class of the School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China.
Yutong LiShi Changxu Class of the School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China.
Jingyan HeShi Changxu Class of the School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China.
Minghua TangSchool of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China.

Funding

National Natural Science Foundation of China 62104267National Natural Science Foundation of China 92164108
6 · The paper itself

Abstract

Resistive random access memory (RRAM) holds great promise for in-memory computing, which is considered the most promising strategy for solving the von Neumann bottleneck. However, there are still significant problems in its application due to the non-uniform performance of RRAM devices. In this work, a bilayer dielectric layer memristor was designed based on the difference in the Gibbs free energy of the oxide. We fabricated Au/Ta

Indexed as

bilayer dielectric structurecrossbar arrayGibbs free energyresistive random access memory (RRAM)

Identifiers

PMID38793178
PMCPMC11123252

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.