Evidence map›Paper›PMID 38789422›Full record

ArticleNature communications2024

An inorganic-blended p-type semiconductor with robust electrical and mechanical properties.

You Meng, Weijun Wang, Rong Fan, Zhengxun Lai, Wei Wang, Dengji Li, Xiaocui Li, Quan Quan, Pengshan Xie, Dong Chen and 8 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature communications, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.

0numbers the graph read from it
0cells of the map it votes in
5citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

5 citing papers in PubMed.

  1. Article
  2. Polarization-Enabled Piezoelectric Tellurium-Selenium (TeAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Article
  3. Article
  4. Enhanced SWIR photodetection in TeScientific reports · 2025
    Article
  5. CNT:TiONanomaterials (Basel, Switzerland) · 2025
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

18 authors.

You Meng *Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.ORCID http://orcid.org/0000-0002-5385-4080
Weijun Wang *Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.
Rong Fan *Department of Mechanical Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.
Zhengxun LaiDepartment of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.
Wei WangDepartment of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.
Dengji LiDepartment of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.
Xiaocui LiDepartment of Mechanical Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.ORCID http://orcid.org/0000-0002-8585-5723
Quan QuanDepartment of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.
Pengshan XieDepartment of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.
Dong ChenDepartment of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.
He ShaoDepartment of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.
Bowen LiDepartment of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.
Zenghui WuDepartment of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.
Zhe YangDepartment of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR.
SenPo YipInstitute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816 8580, Japan.
Chun-Yuen WongDepartment of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR. acywong@cityu.edu.hk.ORCID http://orcid.org/0000-0003-4780-480X
Yang LuChengdu Research Institute, City University of Hong Kong, Chengdu, 610200, China. ylu1@hku.hk.ORCID http://orcid.org/0000-0002-9280-2718
Johnny C HoDepartment of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR. johnnyho@cityu.edu.hk.ORCID http://orcid.org/0000-0003-3000-8794

Funding

Research Grants Council, University Grants Committee (RGC, UGC) CityU RFS2021-1S04
6 · The paper itself

Abstract

Inorganic semiconductors typically have limited p-type behavior due to the scarcity of holes and the localized valence band maximum, hindering the progress of complementary devices and circuits. In this work, we propose an inorganic blending strategy to activate the hole-transporting character in an inorganic semiconductor compound, namely tellurium-selenium-oxygen (TeSeO). By rationally combining intrinsic p-type semimetal, semiconductor, and wide-bandgap semiconductor into a single compound, the TeSeO system displays tunable bandgaps ranging from 0.7 to 2.2 eV. Wafer-scale ultrathin TeSeO films, which can be deposited at room temperature, display high hole field-effect mobility of 48.5 cm

Identifiers

PMID38789422
PMCPMC11126573

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.