Evidence map›Paper›PMID 38789104›Full record

ArticleNano letters2024

All van der Waals Semiconducting PtSe

M Awais Aslam, Simon Leitner, Shubham Tyagi, Alexandros Provias, Vadym Tkachuk, Egon Pavlica, Martina Dienstleder, Daniel Knez, Kenji Watanabe, Takashi Taniguchi and 7 more

Abstract read
In one paragraph

Article in Nano letters, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.

0numbers the graph read from it
0cells of the map it votes in
6citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

6 citing papers in PubMed.

  1. Article
  2. Article
  3. Near-zero hysteresis van der Waals MnAlCommunications materials · 2026
    Article
  4. Article
  5. Article
  6. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

17 authors.

M Awais AslamChair of Physics, Department Physics, Mechanical Engineering, and Electrical Engineering, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria.
Simon LeitnerChair of Physics, Department Physics, Mechanical Engineering, and Electrical Engineering, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria.
Shubham TyagiPhysical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia.
Alexandros ProviasInstitute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Wien, Austria.
Vadym TkachukLaboratory of Organic Matter Physics, University of Nova Gorica, Vipavska 13, Nova Gorica SI-5000, Slovenia.
Egon PavlicaLaboratory of Organic Matter Physics, University of Nova Gorica, Vipavska 13, Nova Gorica SI-5000, Slovenia.ORCID 0000-0003-2877-2590
Martina DienstlederGraz Centre for Electron Microscopy, Steyrergasse 17, 8010 Graz, Austria.
Daniel KnezInstitute of Electron Microscopy and Nanoanalysis, Graz University of Technology (NAWI Graz), Steyrergasse 17, 8010 Graz, Austria.ORCID 0000-0003-0755-958X
Kenji WatanabeResearch Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.ORCID 0000-0003-3701-8119
Takashi TaniguchiResearch Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.ORCID 0000-0002-1467-3105
Dayu YanBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190 Beijing, China.
Youguo ShiBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190 Beijing, China.
Theresia KnoblochInstitute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Wien, Austria.
Michael WaltlChristian Doppler Laboratory for Single-Defect Spectroscopy at the Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Wien, Austria.
Udo SchwingenschlöglPhysical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia.ORCID 0000-0003-4179-7231
Tibor GrasserInstitute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Wien, Austria.ORCID 0000-0001-6536-2238
Aleksandar MatkovićChair of Physics, Department Physics, Mechanical Engineering, and Electrical Engineering, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria.ORCID 0000-0001-8072-6220

Funding

Austrian Science Fund FWF Y 1298
6 · The paper itself

Abstract

Contact resistance is a multifaceted challenge faced by the 2D materials community. Large Schottky barrier heights and gap-state pinning are active obstacles that require an integrated approach to achieve the development of high-performance electronic devices based on 2D materials. In this work, we present semiconducting PtSe

Indexed as

contact resistancegraphenegraphite electrodesPlatinum diselenidetransistors

Identifiers

PMID38789104
PMCPMC11157664

What OpenQuestion holds

Textmetadata
LicenceCC BY-NC-ND
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.