ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2024
Toward Ideal Low-Frequency Noise in Monolayer CVD MoS
Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 8 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
8 citing papers in PubMed.
- Antimony-contact MoSMicrosystems & nanoengineering · 2026Article
- Sustainable Synaptic Device with Two-Dimensional Ferroelectric Materials for Neuromorphic Computing.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- A ferroelectric-ionic-trapping transistor for low power and secure neuromorphic computing.Nature communications · 2026Article
- Thermally activated excess noise by subgap density-of-states in Si-doped ZnSnO thin-film transistor-type gas sensor.Microsystems & nanoengineering · 2026Article
- Repurposing Si CMOS nonidealities for stochastic and analog image processing.Science advances · 2026Article
- Heterojunction-Driven Stochasticity: Bi-Heterojunction Noise-Enhanced Negative Transconductance Transistor in Image Generation.Advanced materials (Deerfield Beach, Fla.) · 2025Article
- Low-frequency noise of MoTeDiscover nano · 2024Article
- Toward Ideal Low-Frequency Noise in Monolayer CVD MoSAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
11 authors.
Funding
Abstract
The pursuit of sub-1-nm field-effect transistor (FET) channels within 3D semiconducting crystals faces challenges due to diminished gate electrostatics and increased charge carrier scattering. 2D semiconductors, exemplified by transition metal dichalcogenides, provide a promising alternative. However, the non-idealities, such as excess low-frequency noise (LFN) in 2D FETs, present substantial hurdles to their realization and commercialization. In this study, ideal LFN characteristics in monolayer MoS
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.