ArticleNanoscale horizons2024
Resistive switching memories with enhanced durability enabled by mixed-dimensional perfluoroarene perovskite heterostructures.
Article in Nanoscale horizons, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.
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Who cites it
6 citing papers in PubMed.
- Ion Migration in Two-Dimensional Organic-Inorganic Hybrid Perovskite Heterostructures: Interface Evolution, Migration Mechanisms and Device Implications.Nanomaterials (Basel, Switzerland) · 2026Review
- Mechanosynthesis of Layered Double Perovskites with Aromatic Spacer Cations for Lead-Free Thin-Film Opto(electro)ionics.Chemphyschem : a European journal of chemical physics and physical chemistry · 2026Article
- Low-Power Perovskite-Based Memristors Enable Fused Reservoir Computing and Neuromorphic Vision with Highly Accurate Color Perception.Small (Weinheim an der Bergstrasse, Germany) · 2026Article
- Lead-free halide perovskite memristors for scalable crossbar arrays.Nano convergence · 2025Review
- Threshold Resistive Switching in Inorganic Lead-Free Cesium-Bismuth Iodide Perovskite for Neuron Emulation.ACS applied electronic materials · 2025Article
- Sustainable Mixed-Halide Perovskite Resistive Switching Memories Using Self-Assembled Monolayers as the Bottom Contact.The journal of physical chemistry letters · 2024Article
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Authors and funding
10 authors.
Funding
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Abstract
Hybrid halide perovskites are attractive candidates for resistive switching memories in neuromorphic computing applications due to their mixed ionic-electronic conductivity. Moreover, their exceptional optoelectronic characteristics make them effective as semiconductors in photovoltaics, opening perspectives for self-powered memory elements. These devices, however, remain unexploited, which is related to the variability in their switching characteristics, weak endurance, and retention, which limit their performance and practical use. To address this challenge, we applied low-dimensional perovskite capping layers onto 3D mixed halide perovskites using two perfluoroarene organic cations, namely (perfluorobenzyl)ammonium and (perfluoro-1,4-phenylene)dimethylammonium iodide, forming Ruddlesden-Popper and Dion-Jacobson 2D perovskite phases, respectively. The corresponding mixed-dimensional perovskite heterostructures were used to fabricate resistive switching memories based on perovskite solar cell architectures, showing that the devices based on perfluoroarene heterostructures exhibited enhanced performance and stability in inert and ambient air atmosphere. This opens perspectives for multidimensional perovskite materials in durable self-powered memory elements in the future.
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.