ArticleNanoscale advances2024
Defect healing and doping of CVD graphene by thermal sulfurization.
Article in Nanoscale advances, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
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2 citing papers in PubMed.
- Resolving the Structural Duality of Graphene Grain Boundaries.Advanced materials (Deerfield Beach, Fla.) · 2026Article
- Atomic-Level Insights into Thermal Carbonization of Ethynyl-Containing Boron Compounds.Small (Weinheim an der Bergstrasse, Germany) · 2026Article
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6 authors.
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Abstract
CVD graphene layers are intrinsically polycrystalline; depending on grain size, their structure at the atomic level is scarcely free of defects, which affects the properties of graphene. On the one hand, atomic-scale defects act as scattering centers and lead to a loss of carrier mobility. On the other hand, structural disorder at grain boundaries provides additional resistance in series that affects material conductivity. Graphene chemical functionalization has been demonstrated to be an effective way to improve its conductivity mainly by increasing carrier concentration. The present study reports the healing effects of sulfur doping on the electrical transport properties of single-layer CVD graphene. A post-growth thermal sulfurization process operating at 250 °C is applied on single layers of graphene on Corning-glass and Si/SiO
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