ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2024
Low-Temperature Nanosecond Laser Process of HZO-IGZO FeFETs toward Monolithic 3D System on Chip Integration.
Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 9 papers.
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Who cites it
9 citing papers in PubMed.
- Light-Absorbing-Layer-Free Flash Lamp Annealing for High-Throughput Fabrication of All-Solution-Processed Oxide Electronics.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Towards Artificial Intelligence Hardware With 3D Integrated Ferroelectric Transistors.Small (Weinheim an der Bergstrasse, Germany) · 2026Article
- Recent progress in HfONanoscale advances · 2026Review
- Flexible active-matrix micro-LED display with 1T-1FeMFET architecture featuring scaling-limit-free design.Nature communications · 2026Article
- Oxygen-controlled IGZO channel deposition for enhanced memory window in ferroelectric FETs.Scientific reports · 2026Article
- Ferroelectrics Hybrids: Harnessing Multifunctionality of 2D Semiconductors in the Post-Moore Era.Advanced materials (Deerfield Beach, Fla.) · 2026Review
- One-Step Laser-Induced Oxidation and Doping for Tailored p-Type Conversion of Al-Doped TiO₂.Small (Weinheim an der Bergstrasse, Germany) · 2025Article
- Solid-State Laser Annealing (SLA) of Fully Solution-Processed Amorphous InZnO Thin-Film Transistors at Various Fluence.ACS omega · 2025Article
- Low-Temperature Nanosecond Laser Process of HZO-IGZO FeFETs toward Monolithic 3D System on Chip Integration.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024Article
Corrections and comments
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Authors and funding
9 authors.
Funding
Abstract
Ferroelectric field-effect transistors (FeFETs) are increasingly important for in-memory computing and monolithic 3D (M3D) integration in system-on-chip (SoC) applications. However, the high-temperature processing required by most ferroelectric memories can lead to thermal damage to the underlying device layers, which poses significant physical limitations for 3D integration processes. To solve this problem, the study proposes using a nanosecond pulsed laser for selective annealing of hafnia-based FeFETs, enabling precise control of heat penetration depth within thin films. Sufficient thermal energy is delivered to the IGZO oxide channel and HZO ferroelectric gate oxide without causing thermal damage to the bottom layer, which has a low transition temperature (<250 °C). Using optimized laser conditions, a fast response time (<1 µs) and excellent stability (cycle > 10
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Registered trials
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