ReviewAdvanced materials (Deerfield Beach, Fla.)2025
Emerging 2D Ferroelectric Devices for In-Sensor and In-Memory Computing.
Review in Advanced materials (Deerfield Beach, Fla.), 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 24 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
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Who cites it
24 citing papers in PubMed.
- Polarization -tilting-induced near-zero thermal expansion in PbTiOChemical science · 2026Article
- Emerging Multimodal Artificial Sensory Fusion Paradigms Toward Advanced Embodied Intelligence.Advanced materials (Deerfield Beach, Fla.) · 2026Review
- Ferroelectric Transistors: from Materials Innovation to Intelligent Electronic Systems.Advanced materials (Deerfield Beach, Fla.) · 2026Review
- Dual-ferroelectric stacked high-performance field-effect transistor.Nature communications · 2026Article
- Fully reversible electric-field control of magnetization in FeNature communications · 2026Article
- Polarization-Enabled Piezoelectric Tellurium-Selenium (TeAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Unified Steep-Slope Switching and Non-Volatile Memory in a Complementarily Stabilized van der Waals Ferroelectric Transistor.Small (Weinheim an der Bergstrasse, Germany) · 2026Article
- Electrochemical in-biosensing computing.National science review · 2026Article
- Configuration-Selective Photocurrent Enhancement Induced by Static Domain Walls in Two-Dimensional Ferroelectric InNanomaterials (Basel, Switzerland) · 2026Article
- Stable Analog Weight Programming in Single-Crystalline van der Waals Ferroelectric Transistors for Reliable Computing-in-Memory.Advanced materials (Deerfield Beach, Fla.) · 2026Article
- Neuromorphic Near-Sensor and In-Sensor Computing Enabled by Next-Generation Material-Based Sensors.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Review
- A Review on Multi-Level Asymmetric Design for 2D Neuromorphic Devices.Nano-micro letters · 2026Review
- Organic Transistor-Based Neuromorphic Electronics and Their Recent Applications.Small methods · 2026Review
- Optoelectronic-Driven van der Waals Ferroelectric Materials-Based Memory Devices for Retinomorphic and In-Sensory Hardware.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Review
- Temperature field ultrafast detection and identification quantum sensor based on diamond array.Microsystems & nanoengineering · 2025Article
- Challenges and Opportunities of Upconversion Nanoparticles for Emerging NIR Optoelectronic Devices.Advanced materials (Deerfield Beach, Fla.) · 2025Review
- Demonstration of transformer-based ALBERT model on a 14nm analog AI inference chip.Nature communications · 2025Article
- Giant Modulation of Microstructure and Ferroelectric/Piezoelectric Responses in Pb(Zr,Ti)ONanomaterials (Basel, Switzerland) · 2025Article
- 2D ferroelectric narrow-bandgap semiconductor Wurtzite' type α-InNature communications · 2025Article
- An Electrode Design Strategy to Minimize Ferroelectric Imprint Effect.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
Corrections and comments
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Authors and funding
5 authors.
Funding
Abstract
The quantity of sensor nodes within current computing systems is rapidly increasing in tandem with the sensing data. The presence of a bottleneck in data transmission between the sensors, computing, and memory units obstructs the system's efficiency and speed. To minimize the latency of data transmission between units, novel in-memory and in-sensor computing architectures are proposed as alternatives to the conventional von Neumann architecture, aiming for data-intensive sensing and computing applications. The integration of 2D materials and 2D ferroelectric materials has been expected to build these novel sensing and computing architectures due to the dangling-bond-free surface, ultra-fast polarization flipping, and ultra-low power consumption of the 2D ferroelectrics. Here, the recent progress of 2D ferroelectric devices for in-sensing and in-memory neuromorphic computing is reviewed. Experimental and theoretical progresses on 2D ferroelectric devices, including passive ferroelectrics-integrated 2D devices and active ferroelectrics-integrated 2D devices, are reviewed followed by the integration of perception, memory, and computing application. Notably, 2D ferroelectric devices have been used to simulate synaptic weights, neuronal model functions, and neural networks for image processing. As an emerging device configuration, 2D ferroelectric devices have the potential to expand into the sensor-memory and computing integration application field, leading to new possibilities for modern electronics.
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.