Evidence map›Paper›PMID 38730235›Full record

ArticleScientific reports2024

Tunable electronic and photoelectric properties of Janus group-III chalcogenide monolayers and based heterostructures.

Yipeng Zhao, Qiaolai Tan, Honglai Li, Zhiqiang Li, Yicheng Wang, Liang Ma

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Scientific reports, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Article
  2. Two-dimensional Janus α-AuRSC advances · 2025
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Yipeng ZhaoCollege of Physics and Electronic Engineering, Hengyang Normal University, Hengyang, 421008, China.
Qiaolai TanSchool of Physics and Electronic Electrical Engineering, Xiangnan University, Chenzhou, 423000, China. 492139003@qq.com.
Honglai LiCollege of Physics Science and Technology, Hebei University, Baoding, 071002, People's Republic of China.
Zhiqiang LiCollege of Physics and Electronic Engineering, Hengyang Normal University, Hengyang, 421008, China.
Yicheng WangCollege of Physics and Electronic Engineering, Hengyang Normal University, Hengyang, 421008, China.
Liang MaCollege of Physics and Electronic Engineering, Hengyang Normal University, Hengyang, 421008, China. ml_hw@hotmail.com.

Funding

National Natural Science Foundation of China 51802089National Natural Science Foundation of China 52302174Scientific Research Fund of Hunan Provincial Education Department 22B0715Scientific Research Fund of Hunan Provincial Education Department 22B0726
6 · The paper itself

Abstract

Janus group-III chalcogenide monolayers and based heterostructures with breaking vertical structural symmetry offer additional prospects in the upcoming high-performance photoelectric devices. We studied the geometrical, electronic, and photoelectric properties of Janus group-III chalcogenide monolayers and heterostructures. The most energy favorable stacking design of ten vertical heterostructures are considered. The results showed that the Janus Se-In-Ga-S and S-In-Ga-Se monolayers exhibit semiconducting characteristics with the band gaps of 1.295 eV and 1.752 eV, respectively. Furthermore, the different stacking configurations and surface termination at interface can realize the transition of band alignment between type I and type II due to the interlayer coupling. Moreover, we systematically investigated the photoelectric properties of Janus group-III chalcogenide heterostructures and predicated an optimized power conversion efficiency of 16.2%. These findings can aid in comprehending the customized characteristics of Janus group-III chalcogenide heterostructures, offering theoretical guidance for creating innovative photoelectric devices.

Identifiers

PMID38730235
PMCPMC11087539

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