Evidence map›Paper›PMID 38714769›Full record

ArticleNature communications2024

Atomic-level polarization reversal in sliding ferroelectric semiconductors.

Fengrui Sui, Haoyang Li, Ruijuan Qi, Min Jin, Zhiwei Lv, Menghao Wu, Xuechao Liu, Yufan Zheng, Beituo Liu, Rui Ge and 5 more

Erratum issuedAbstract read
In one paragraph

Article in Nature communications, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. An erratum has been issued. Cited by 17 papers.

0numbers the graph read from it
0cells of the map it votes in
17citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

17 citing papers in PubMed.

  1. Article
  2. Recent Advances in Unconventional Ferroelectrics and Multiferroics.Advanced materials (Deerfield Beach, Fla.) · 2026
    Review
  3. Two-Dimensional Indium Selenide for Next-Generation Electronics.International journal of molecular sciences · 2026
    Review
  4. Article
  5. Te/FeNanomaterials (Basel, Switzerland) · 2026
    Article
  6. Diverse Landscape of Tunable Magnetic, Topological, and Ferroelectric States in 2D TiAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Article
  7. Article
  8. Article
  9. Article
  10. Article
  11. Article
  12. Article
  13. Article
  14. Article
  15. Thermally Induced Irreversible Disorder in Interlayer Stacking of γ-GeSe.Small (Weinheim an der Bergstrasse, Germany) · 2024
    Article
  16. Article
  17. Article
4 · The record

Corrections and comments

5 · Who and what money

Authors and funding

15 authors.

Fengrui SuiKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.ORCID http://orcid.org/0000-0003-3893-5517
Haoyang LiKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.
Ruijuan QiKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China. rjqi@ee.ecnu.edu.cn.ORCID http://orcid.org/0000-0003-2305-0505
Min JinCollege of Materials, Shanghai Dianji University, Shanghai, 201306, China. jmaish@aliyun.com.
Zhiwei LvKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.
Menghao WuSchool of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China.
Xuechao LiuShanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China.
Yufan ZhengKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.
Beituo LiuKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.
Rui GeKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.ORCID http://orcid.org/0009-0000-0625-2493
Yu-Ning WuKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China. ynwu@phy.ecnu.edu.cn.ORCID http://orcid.org/0000-0003-3970-3160
Rong HuangKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.ORCID http://orcid.org/0000-0002-2095-3883
Fangyu YueKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China. fyyue@ee.ecnu.edu.cn.ORCID http://orcid.org/0000-0002-3153-6022
Junhao ChuKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.
Chungang DuanKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.

Funding

National Natural Science Foundation of China (National Science Foundation of China) 12134003
6 · The paper itself

Abstract

Intriguing "slidetronics" has been reported in van der Waals (vdW) layered non-centrosymmetric materials and newly-emerging artificially-tuned twisted moiré superlattices, but correlative experiments that spatially track the interlayer sliding dynamics at atomic-level remain elusive. Here, we address the decisive challenge to in-situ trace the atomic-level interlayer sliding and the induced polarization reversal in vdW-layered yttrium-doped γ-InSe, step by step and atom by atom. We directly observe the real-time interlayer sliding by a 1/3-unit cell along the armchair direction, corresponding to vertical polarization reversal. The sliding driven only by low energetic electron-beam illumination suggests rather low switching barriers. Additionally, we propose a new sliding mechanism that supports the observed reversal pathway, i.e., two bilayer units slide towards each other simultaneously. Our insights into the polarization reversal via the atomic-scale interlayer sliding provide a momentous initial progress for the ongoing and future research on sliding ferroelectrics towards non-volatile storages or ferroelectric field-effect transistors.

Identifiers

PMID38714769
PMCPMC11076638

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.