ArticleScientific reports2024
Position-resolved charge collection of silicon carbide detectors with an epitaxially-grown graphene layer.
Article in Scientific reports, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.
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Who cites it
6 citing papers in PubMed.
- Performance Evolution and Research Progress of Silicon Carbide Sensors in Radiation Environments: A Review.Micromachines · 2026Review
- A graphene-on-silicon photodetector for low penetrating radiation.Scientific reports · 2026Article
- Experimental evaluation of silicon carbide P-N detectors under thermal and fast neutron irradiation at the RA-6 nuclear research reactor.Scientific reports · 2025Article
- Characterization of silicon carbide diodes as cost-effective active detectors for proton UHDR dosimetry.Medical physics · 2025Article
- Thermal Surface Properties, London Dispersive and Polar Surface Energy of Graphene and Carbon Materials Using Inverse Gas Chromatography at Infinite Dilution.Molecules (Basel, Switzerland) · 2024Article
- First use of silicon carbide detectors with graphene-enhanced contacts for medical dosimetry.Scientific reports · 2024Article
Corrections and comments
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Authors and funding
6 authors.
Funding
Abstract
Silicon carbide (SiC) has outstanding physical properties therefore, diodes based on SiC are being considered for many radiation detection applications such as particle accelerator experiments and medical dosimetry. Moreover, by reducing the metal on the surface of the diode there is the potential to enhance its performance in some fields where the presence of metal is detrimental. To this end, SiC detectors with an epitaxially-grown graphene layer (EG), that substitutes the metallic contact, in the sensitive region were produced at IMB-CNM, profiting from the conductivity of the mono-atomic layer material. To isolate the effect of the graphene on the charge collection, samples without graphene were produced in parallel. In this paper, the effect of EG on Silicon Carbide p-in-n radiation detectors is studied in terms of charge collection with a radioactive source and by means of the transient current technique (TCT), which allows for position-dependent signal formation analysis. As a result of the former, we show the capability of the EG-SiC sensor for charge collection after signal integration, to a resolution close to that of a sensor fully metallised. Moreover, from the TCT studies, we observe uniform charge collection across the active region, as well as an up-to
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Registered trials
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