ArticleNature2024
Bevel-edge epitaxy of ferroelectric rhombohedral boron nitride single crystal.
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Article in Nature, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 22 papers.
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22citing papers in PubMed
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Who cites it
22 citing papers in PubMed.
- Stacking-specific two-dimensional InNature nanotechnology · 2026Article
- Sliding ferroelectricity scales up.Nature nanotechnology · 2026Article
- Van der Waals surface reconstruction for oriented epitaxial growth of two-dimensional metallic oxides.Nature materials · 2026Article
- Single-crystal rhombohedral boron nitride wafers for integrated sliding ferroelectric memory.Nature nanotechnology · 2026Article
- Unconventional cross-step growth of monolayer MoSScience advances · 2026Article
- Advances and Challenges in Atomic-Level Growth of Two-Dimensional Single Crystals.Precision chemistry · 2026Review
- Wafer-Scale Self-Limiting Epitaxy of Bernal-Stacked Single-Crystal Boron Nitride.Small (Weinheim an der Bergstrasse, Germany) · 2026Article
- Phase engineering of relaxor ferroelectricity in van der Waals crystal.Nature communications · 2026Article
- Full Crystallographic Imaging of Hexagonal Boron Nitride Monolayers with Phonon-Enhanced Sum-Frequency Microscopy.Advanced materials (Deerfield Beach, Fla.) · 2026Article
- Highly Oriented Epitaxial Hexagonal Boron Nitride Multilayers on High-Temperature-Resistant Single-Crystal Aluminum Nitride (0001).Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
- Dislocation-driven growth of single-crystal metal foils with high-index facets.Nature communications · 2025Article
- Deploying two-dimensional memristors on chip.Nature nanotechnology · 2025Article
- Chirality-transferred epitaxy of circular polarization-sensitive ReSNature communications · 2025Article
- Edge-feeding synchronous epitaxy of layer-controlled graphene films on heterogeneous catalytic substrates.Nature communications · 2025Article
- Boron nitride in AA stacking.Nature materials · 2025Article
- Wafer-scale AA-stacked hexagonal boron nitride grown on a GaN substrate.Nature materials · 2025Article
- Intelligent self-correcting growth of uniform Bernal-stacked bi-/trilayer graphene.Proceedings of the National Academy of Sciences of the United States of America · 2025Article
- Epitaxial Ferroelectric Hexagonal Boron Nitride Grown on Graphene.Advanced materials (Deerfield Beach, Fla.) · 2025Article
- Resolving polarization switching pathways of sliding ferroelectricity in trilayer 3R-MoSNature nanotechnology · 2025Article
- A tunable entangled photon-pair source based on a Van der Waals insulator.Nature communications · 2025Article
Corrections and comments
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Authors and funding
27 authors.
Li Wang *Institute of Physics, Chinese Academy of Sciences, Beijing, China. liwang@iphy.ac.cn.
Jiajie Qi *State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.
Wenya Wei *Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, China.
Mengqi Wu *School of Engineering, Westlake University, Hangzhou, China.
Zhibin ZhangState Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.ORCID http://orcid.org/0000-0002-9303-9793
Xiaomin LiInstitute of Physics, Chinese Academy of Sciences, Beijing, China.
Huacong SunInstitute of Physics, Chinese Academy of Sciences, Beijing, China.
Quanlin GuoState Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.
Meng CaoInstitute of Physics, Chinese Academy of Sciences, Beijing, China.
Qinghe WangState Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.ORCID http://orcid.org/0000-0002-7427-2354
Chao ZhaoShenzhen Institute of Advanced Technology, Shenzhen, China.
Yuxuan ShengSchool of Physics, Huazhong University of Science and Technology, Wuhan, China.
Zhetong LiuInternational Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China.
Can LiuKey Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing, China.ORCID http://orcid.org/0000-0001-5451-4144
Muhong WuInternational Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China.ORCID http://orcid.org/0000-0003-3607-8945
Zhi XuSongshan Lake Materials Laboratory, Dongguan, China.
Wenlong WangInstitute of Physics, Chinese Academy of Sciences, Beijing, China.
Hao HongState Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.
Peng GaoInternational Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China.
Menghao WuSchool of Physics, Huazhong University of Science and Technology, Wuhan, China.
Zhu-Jun WangSchool of Physical Science and Technology, ShanghaiTech University, Shanghai, China.ORCID http://orcid.org/0000-0002-8227-7323
Xiaozhi XuGuangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, China.ORCID http://orcid.org/0000-0003-1067-9590
Enge WangInstitute of Physics, Chinese Academy of Sciences, Beijing, China.ORCID http://orcid.org/0000-0001-5624-5320
Feng DingShenzhen Institute of Advanced Technology, Shenzhen, China. f.ding@siat.ac.cn.ORCID http://orcid.org/0000-0001-9153-9279
Xiaorui ZhengSchool of Engineering, Westlake University, Hangzhou, China. zhengxiaorui@westlake.edu.cn.
Kaihui LiuState Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China. khliu@pku.edu.cn.ORCID http://orcid.org/0000-0002-8781-2495
Xuedong BaiInstitute of Physics, Chinese Academy of Sciences, Beijing, China. xdbai@iphy.ac.cn.ORCID http://orcid.org/0000-0002-1403-491X
Funding
No grant is acknowledged in the PubMed record.
Abstract
Within the family of two-dimensional dielectrics, rhombohedral boron nitride (rBN) is considerably promising owing to having not only the superior properties of hexagonal boron nitride
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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.