Optimization of Bilayer Resistive Random Access Memory Based on Ti/HfO

Zhendong Sun, Pengfei Wang, Xuemei Li, Lijia Chen, Ying Yang, Chunxia Wang

Abstract read

In one paragraph

Article in Materials (Basel, Switzerland), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it

0cells of the map it votes in

0citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Zhendong SunCollege of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, China.

Pengfei WangAnalog Foundries Co., Ltd., Chongqing 401332, China.

Xuemei LiCollege of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, China.

Lijia ChenCollege of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, China.ORCID 0000-0003-3797-037X

Ying YangCollege of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, China.

Chunxia WangCollege of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, China.

Funding

Curriculum Ideological and Political" Demonstration Project of Chongqing Municipal Education Commission YKCSZ23102Natural Science Foundation of Chongqing CSTB2023NSCQ-MSX0425Natural Science Foundation of Chongqing cstc2021jcyj-msxmX0576Scientific and Technological Research Program of Chongqing Municipal Education Commission KJQN202200518Scientific and Technological Research Program of Chongqing Municipal Education Commission KJQN202200545Scientific and Technological Research Program of Chongqing Municipal Education Commission KJQN202300548Scientific and Technological Research Program of Chongqing Municipal Education Commission KJZD-K202300516

6 · The paper itself

Abstract

In this paper, the electrothermal coupling model of metal oxide resistive random access memory (RRAM) is analyzed by using a 2D axisymmetrical structure in COMSOL Multiphysics simulation software. The RRAM structure is a Ti/HfO

Indexed as

COMSOLconductive filamentelectrothermal coupling modelresistance switching

Identifiers

PMID38673209

DOI10.3390/ma17081852

PMCPMC11051404

What OpenQuestion holds

Textmetadata

LicenceCC BY

Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.