ArticleNanomaterials (Basel, Switzerland)2024
The Influence Mechanism of Quantum Well Growth and Annealing Temperature on In Migration and Stress Modulation Behavior.
Article in Nanomaterials (Basel, Switzerland), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
This study explores the effects of growth temperature of InGaN/GaN quantum well (QW) layers on indium migration, structural quality, and luminescence properties. It is found that within a specific range, the growth temperature can control the efficiency of In incorporation into QWs and strain energy accumulated in the QW structure, modulating the luminescence efficiency. Temperature-dependent photoluminescence (TDPL) measurements revealed a more pronounced localized state effect in QW samples grown at higher temperatures. Moreover, a too high annealing temperature will enhance indium migration, leading to an increased density of non-radiative recombination centers and a more pronounced quantum-confined Stark effect (QCSE), thereby reducing luminescence intensity. These findings highlight the critical role of thermal management in optimizing the performance of InGaN/GaN MQWs in LEDs and other photoelectronic devices.
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