Evidence map›Paper›PMID 38649747›Full record

ArticleNature nanotechnology2024

Nanosurface-reconstructed perovskite for highly efficient and stable active-matrix light-emitting diode display.

Hongjin Li, Yifeng Feng, Meiyi Zhu, Yun Gao, Chao Fan, Qiaopeng Cui, Qiuting Cai, Ke Yang, Haiping He, Xingliang Dai and 2 more

Abstract read
PubMed Publisher
In one paragraph

Article in Nature nanotechnology, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 35 papers.

0numbers the graph read from it
0cells of the map it votes in
35citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

35 citing papers in PubMed.

  1. Article
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  3. HNature communications · 2026
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  11. Sustainable KCl-Assisted PbIAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Article
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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

12 authors.

Hongjin LiSchool of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, People's Republic of China.ORCID http://orcid.org/0009-0009-8467-2181
Yifeng FengSchool of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, People's Republic of China.
Meiyi ZhuSchool of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, People's Republic of China.
Yun GaoSchool of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, People's Republic of China.
Chao FanSchool of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, People's Republic of China.
Qiaopeng CuiSchool of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, People's Republic of China.
Qiuting CaiSchool of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, People's Republic of China.
Ke YangDepartment of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, People's Republic of China.
Haiping HeSchool of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, People's Republic of China.ORCID http://orcid.org/0000-0001-8246-0286
Xingliang DaiSchool of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, People's Republic of China. shanfeng@zju.edu.cn.ORCID http://orcid.org/0000-0001-5288-9700
Jingyun HuangSchool of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, People's Republic of China. huangjy@zju.edu.cn.ORCID http://orcid.org/0000-0003-2701-8289
Zhizhen YeSchool of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, People's Republic of China. yezz@zju.edu.cn.ORCID http://orcid.org/0000-0002-0886-0115

Funding

National Natural Science Foundation of China (National Science Foundation of China) 52102188National Natural Science Foundation of China (National Science Foundation of China) 52172159
6 · The paper itself

Abstract

Perovskite quantum dots (QDs) are promising for various photonic applications due to their high colour purity, tunable optoelectronic properties and excellent solution processability. Surface features impact their optoelectronic properties, and surface defects remain a major obstacle to progress. Here we develop a strategy utilizing diisooctylphosphinic acid-mediated synthesis combined with hydriodic acid-etching-driven nanosurface reconstruction to stabilize CsPbI

Identifiers

PMID38649747

What OpenQuestion holds

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Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.