ArticleNature nanotechnology2024
Upconversion electroluminescence in 2D semiconductors integrated with plasmonic tunnel junctions.
Article in Nature nanotechnology, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
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Who cites it
4 citing papers in PubMed.
- Quantum Hydrodynamic Theory for Sub-Nanometer Gaps: Atomic Protrusions Govern Near-Field Enhancement and Tunneling Signatures.Materials (Basel, Switzerland) · 2026Article
- Roadmap for Photonics with 2D Materials.ACS photonics · 2025Review
- Active control of excitonic strong coupling and electroluminescence in electrically driven plasmonic nanocavities.Science advances · 2025Article
- On chip control and detection of complex SPP and waveguide modes based on plasmonic interconnect circuits.Nanophotonics (Berlin, Germany) · 2024Article
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Authors and funding
9 authors.
Funding
Abstract
Plasmonic tunnel junctions are a unique electroluminescent system in which light emission occurs via an interplay between tunnelling electrons and plasmonic fields instead of electron-hole recombination as in conventional light-emitting diodes. It was previously shown that placing luminescent molecules in the tunneling pathway of nanoscopic tunnel junctions results in peculiar upconversion electroluminescence where the energy of emitted photons exceeds that of excitation electrons. Here we report the observation of upconversion electroluminescence in macroscopic van der Waals plasmonic tunnel junctions comprising gold and few-layer graphene electrodes separated by a ~2-nm-thick hexagonal boron nitride tunnel barrier and a monolayer semiconductor. We find that the semiconductor ground exciton emission is triggered at excitation electron energies lower than the semiconductor optical gap. Interestingly, this upconversion is reached in devices operating at a low conductance (<10
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Registered trials
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