ArticleNanomaterials (Basel, Switzerland)2024
Monolithic Use of Inert Gas for Highly Transparent and Conductive Indium Tin Oxide Thin Films.
Article in Nanomaterials (Basel, Switzerland), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
Due to its excellent electrical conductivity, high transparency in the visible spectrum, and exceptional chemical stability, indium tin oxide (ITO) has become a crucial material in the fields of optoelectronics and nanotechnology. This article provides a thorough analysis of growing ITO thin films with various thicknesses to study the impact of thickness on their electrical, optical, and physical properties for solar-cell applications. ITO was prepared through radio frequency (RF) magnetron sputtering using argon gas with no alteration in temperature or changes in substrate heating, followed with annealing in a tube furnace under inert conditions. An investigation of the influence of thickness on the optical, electrical, and physical properties of the films was conducted. We found that the best thickness for ITO thin films was 100 nm in terms of optical, electrical, and physical properties. To gain full comprehension of the impact on electrical properties, the different samples were characterized using a four-point probe and, interestingly, we found a high conductivity in the range of 1.8-2 × 10
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