Evidence map›Paper›PMID 38599238›Full record

ArticleNature2024

Selenium-alloyed tellurium oxide for amorphous p-channel transistors.

Ao Liu, Yong-Sung Kim, Min Gyu Kim, Youjin Reo, Taoyu Zou, Taesu Choi, Sai Bai, Huihui Zhu, Yong-Young Noh

Erratum issuedAbstract read
In one paragraph

Article in Nature, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. An erratum has been issued. Cited by 33 papers.

0numbers the graph read from it
0cells of the map it votes in
33citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

33 citing papers in PubMed.

  1. Article
  2. Article
  3. Review
  4. Article
  5. Article
  6. Article
  7. Wafer-Scale 3D Integration for High-Density Multi-Valued Neuromorphic Logic.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Article
  8. Scalable Graphene/Sn-WSeSmall (Weinheim an der Bergstrasse, Germany) · 2026
    Article
  9. Article
  10. Polarization-Enabled Piezoelectric Tellurium-Selenium (TeAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Article
  11. Article
  12. Article
  13. Article
  14. Article
  15. Article
  16. Oxide Semiconductor Thin-Film Transistors for Low-Power Electronics.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Review
  17. Article
  18. Review
  19. Article
  20. Article
4 · The record

Corrections and comments

5 · Who and what money

Authors and funding

9 authors.

Ao LiuInstitute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, China. ao.liu@uestc.edu.cn.ORCID http://orcid.org/0000-0003-2232-1633
Yong-Sung KimKorea Research Institute of Standards and Science, Daejeon, Republic of Korea.ORCID http://orcid.org/0000-0002-6057-2997
Min Gyu KimBeamline Research Division, Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang, Republic of Korea.ORCID http://orcid.org/0000-0002-2366-6898
Youjin ReoDepartment of Chemical Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea.ORCID http://orcid.org/0000-0001-7939-5946
Taoyu ZouDepartment of Chemical Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea.
Taesu ChoiDepartment of Chemical Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea.
Sai BaiInstitute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, China.ORCID http://orcid.org/0000-0001-7623-686X
Huihui ZhuDepartment of Chemical Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea. hhzhu@uestc.edu.cn.ORCID http://orcid.org/0000-0002-7241-3344
Yong-Young NohDepartment of Chemical Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea. yynoh@postech.ac.kr.ORCID http://orcid.org/0000-0001-7222-2401

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Compared to polycrystalline semiconductors, amorphous semiconductors offer inherent cost-effective, simple and uniform manufacturing. Traditional amorphous hydrogenated Si falls short in electrical properties, necessitating the exploration of new materials. The creation of high-mobility amorphous n-type metal oxides, such as a-InGaZnO (ref.

Identifiers

PMID38599238
PMCPMC11111403

What OpenQuestion holds

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LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.