ArticleCrystal growth & design2024
Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxy.
Article in Crystal growth & design, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
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1 citing paper in PubMed.
- Monolithically Integrated GaAs Nanoislands on CMOS-Compatible Si Nanotips Using GS-MBE.Nanomaterials (Basel, Switzerland) · 2025Article
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13 authors.
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Abstract
Gallium phosphide (GaP) is a III-V semiconductor with remarkable optoelectronic properties, and it has almost the same lattice constant as silicon (Si). However, to date, the monolithic and large-scale integration of GaP devices with silicon remains challenging. In this study, we present a nanoheteroepitaxy approach using gas-source molecular-beam epitaxy for selective growth of GaP islands on Si nanotips, which were fabricated using complementary metal-oxide semiconductor (CMOS) technology on a 200 mm n-type Si(001) wafer. Our results show that GaP islands with sizes on the order of hundreds of nanometers can be successfully grown on CMOS-compatible wafers. These islands exhibit a zinc-blende phase and possess optoelectronic properties similar to those of a high-quality epitaxial GaP layer. This result marks a notable advancement in the seamless integration of GaP-based devices with high scalability into Si nanotechnology and integrated optoelectronics.
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