ArticleACS applied materials & interfaces2024
Vacancy-Engineered Nickel Ferrite Forming-Free Low-Voltage Resistive Switches for Neuromorphic Circuits.
Article in ACS applied materials & interfaces, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
What it found
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Who cites it
5 citing papers in PubMed.
- Tunable Interfacial to Filamentary Resistive Switching Mechanism in Room-Temperature-Grown Amorphous YBaACS applied materials & interfaces · 2026Article
- Interface-Induced Synaptic Performance in CeOACS applied materials & interfaces · 2025Article
- Permanent Strain Engineering of Molybdenum Disulfide Using Laser-Driven Stressors for Energy-Efficient Resistive Switching Memory Devices.Nanomaterials (Basel, Switzerland) · 2024Article
- Quantum Dots for Resistive Switching Memory and Artificial Synapse.Nanomaterials (Basel, Switzerland) · 2024Review
- Understanding the Reversible Transition of Unipolar and Bipolar Resistive Switching Characteristics in Solution-Derived Nanocrystalline Au-CoACS omega · 2024Article
Corrections and comments
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Authors and funding
8 authors.
Funding
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Abstract
Innovations in resistive switching devices constitute a core objective for the development of ultralow-power computing devices. Forming-free resistive switching is a type of resistive switching that eliminates the need for an initial high voltage for the formation of conductive filaments and offers promising opportunities to overcome the limitations of traditional resistive switching devices. Here, we demonstrate mixed charge state oxygen vacancy-engineered electroforming-free resistive switching in NiFe
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Registered trials
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