ArticleRSC advances2024
High conductivity characteristics of phosphorus-doped nanocrystalline silicon thin films by KrF pulsed excimer laser irradiation method.
Article in RSC advances, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
The microstructure and high conductivity properties of phosphorus-doped nanocrystalline silicon films were investigated on samples prepared by a plasma-enhanced chemical vapor deposition technique and the KrF pulsed excimer laser irradiation method. The results of Fourier transform infrared spectroscopy and Raman spectroscopy show that Si nanocrystallites with an average diameter of 2 nm to 3 nm are formed in the film. The degree of crystallinity increases with the increase of laser radiation intensity, while the content of hydrogen decreases gradually. More phosphorus atoms are substitutionally incorporated into the nc-Si dots under higher laser irradiation fluence, which is responsible for the high dark conductivity. By controlling the laser fluence at 1.0 J cm
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