Evidence map›Paper›PMID 38561403›Full record

ArticleNature communications2024

Full integration of highly stretchable inorganic transistors and circuits within molecular-tailored elastic substrates on a large scale.

Seung-Han Kang, Jeong-Wan Jo, Jong Min Lee, Sanghee Moon, Seung Bum Shin, Su Bin Choi, Donghwan Byeon, Jaehyun Kim, Myung-Gil Kim, Yong-Hoon Kim and 2 more

Abstract read
In one paragraph

Article in Nature communications, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 16 papers.

0numbers the graph read from it
0cells of the map it votes in
16citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

16 citing papers in PubMed.

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  15. Pushing Pressure Detection Sensitivity to New Limits by Modulus-Tunable Mechanism.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024
    Article
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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

12 authors.

Seung-Han Kang *Department of Intelligent Semiconductor Engineering, Chung-Ang University, Seoul, 06974, Korea.ORCID http://orcid.org/0009-0003-2449-3778
Jeong-Wan Jo *Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge, CB3 0FA, UK.ORCID http://orcid.org/0000-0002-4341-6810
Jong Min LeeDepartment of Intelligent Semiconductor Engineering, Chung-Ang University, Seoul, 06974, Korea.ORCID http://orcid.org/0009-0009-7993-6621
Sanghee MoonSchool of Electrical and Electronic Engineering, Chung-Ang University, Seoul, 06974, Korea.
Seung Bum ShinSchool of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Korea.
Su Bin ChoiDepartment of Smart Fab. Technology, Sungkyunkwan University, Suwon, 16419, Korea.
Donghwan ByeonDepartment of Intelligent Semiconductor Engineering, Chung-Ang University, Seoul, 06974, Korea.
Jaehyun KimDepartment of Semiconductor Science, Dongguk University, Seoul, 04620, Republic of Korea.
Myung-Gil KimSchool of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Korea.ORCID http://orcid.org/0000-0002-8607-5972
Yong-Hoon KimSchool of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Korea. yhkim76@skku.edu.ORCID http://orcid.org/0000-0003-0057-1893
Jong-Woong KimDepartment of Smart Fab. Technology, Sungkyunkwan University, Suwon, 16419, Korea. wyjd@skku.edu.ORCID http://orcid.org/0000-0003-4010-056X
Sung Kyu ParkDepartment of Intelligent Semiconductor Engineering, Chung-Ang University, Seoul, 06974, Korea. skpark@cau.ac.kr.ORCID http://orcid.org/0000-0001-9617-2541

Funding

National Research Foundation of Korea (NRF) NRF-2017R1A5A1014708National Research Foundation of Korea (NRF) NRF-2019R1A2C2002447National Research Foundation of Korea (NRF) RS-2023-00281346
6 · The paper itself

Abstract

The emergence of high-form-factor electronics has led to a demand for high-density integration of inorganic thin-film devices and circuits with full stretchability. However, the intrinsic stiffness and brittleness of inorganic materials have impeded their utilization in free-form electronics. Here, we demonstrate highly integrated strain-insensitive stretchable metal-oxide transistors and circuitry (442 transistors/cm

Identifiers

PMID38561403
PMCPMC10985077

What OpenQuestion holds

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LicenceCC BY
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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.