Evidence map›Paper›PMID 38553556›Full record

ArticleScientific reports2024

Inkjet printed IGZO memristors with volatile and non-volatile switching.

Miguel Franco, Asal Kiazadeh, Jonas Deuermeier, S Lanceros-Méndez, Rodrigo Martins, Emanuel Carlos

Abstract read
In one paragraph

Article in Scientific reports, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Additive Manufacturing of Neuromorphic Systems.Advanced materials (Deerfield Beach, Fla.) · 2025
    Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Miguel FrancoCenter of Physics, University of Minho and Laboratory of Physics for Materials and Emergent Technologies, LapMET, Campus de Gualtar, 4710-057, Braga, Portugal.
Asal KiazadehCENIMAT|i3N, Department of Materials Science, School of Science and Technology, NOVA University Lisbon and CEMOP/UNINOVA, Caparica, Portugal. a.kiazadeh@fct.unl.pt.
Jonas DeuermeierCENIMAT|i3N, Department of Materials Science, School of Science and Technology, NOVA University Lisbon and CEMOP/UNINOVA, Caparica, Portugal.
S Lanceros-MéndezCenter of Physics, University of Minho and Laboratory of Physics for Materials and Emergent Technologies, LapMET, Campus de Gualtar, 4710-057, Braga, Portugal.ORCID http://orcid.org/0000-0001-6791-7620
Rodrigo MartinsCENIMAT|i3N, Department of Materials Science, School of Science and Technology, NOVA University Lisbon and CEMOP/UNINOVA, Caparica, Portugal.
Emanuel CarlosCENIMAT|i3N, Department of Materials Science, School of Science and Technology, NOVA University Lisbon and CEMOP/UNINOVA, Caparica, Portugal. e.carlos@fct.unl.pt.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Solution-based memristors deposited by inkjet printing technique have a strong technological potential based on their scalability, low cost, environmentally friendlier processing by being an efficient technique with minimal material waste. Indium-gallium-zinc oxide (IGZO), an oxide semiconductor material, shows promising resistive switching properties. In this work, a printed Ag/IGZO/ITO memristor has been fabricated. The IGZO thickness influences both memory window and switching voltage of the devices. The devices show both volatile counter8wise (c8w) and non-volatile 8wise (8w) switching at low operating voltage. The 8w switching has a SET and RESET voltage lower than 2 V and - 5 V, respectively, a retention up to 10

Indexed as

IGZOInkjet printingMemristorPrinted electronicsVolatile and non-volatile behavior

Identifiers

PMID38553556
PMCPMC10980760

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.