Evidence map›Paper›PMID 38553435›Full record

ArticleNature communications2024

Machine-learning-assisted and real-time-feedback-controlled growth of InAs/GaAs quantum dots.

Chao Shen, Wenkang Zhan, Kaiyao Xin, Manyang Li, Zhenyu Sun, Hui Cong, Chi Xu, Jian Tang, Zhaofeng Wu, Bo Xu and 4 more

Abstract read
In one paragraph

Article in Nature communications, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 12 papers.

0numbers the graph read from it
0cells of the map it votes in
12citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

12 citing papers in PubMed.

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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

14 authors.

Chao Shen *Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Wenkang Zhan *Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Kaiyao XinCollege of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Science, Beijing, 101804, China.
Manyang LiLaboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Zhenyu SunLaboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Hui CongCollege of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Science, Beijing, 101804, China.
Chi XuCollege of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Science, Beijing, 101804, China.
Jian TangSchool of Physical and Electronic Engineering, Yancheng Teachers University, Yancheng, 224002, China.
Zhaofeng WuSchool of Physics Science and Technology, Xinjiang University, Urumqi, Xinjiang, 830046, China.
Bo XuLaboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Zhongming WeiCollege of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Science, Beijing, 101804, China.ORCID http://orcid.org/0000-0002-6237-0993
Chunlai XueCollege of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Science, Beijing, 101804, China.
Chao ZhaoLaboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China. zhaochao@semi.ac.cn.ORCID http://orcid.org/0000-0002-9582-1068
Zhanguo WangLaboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.

Funding

Chinese Academy of Sciences (CAS) XDB43010102Chinese Academy of Sciences (CAS) YSBR-056Ministry of Science and Technology of the People's Republic of China (Chinese Ministry of Science and Technology) 2021YFB2206503National Natural Science Foundation of China (National Science Foundation of China) 62274159
6 · The paper itself

Abstract

The applications of self-assembled InAs/GaAs quantum dots (QDs) for lasers and single photon sources strongly rely on their density and quality. Establishing the process parameters in molecular beam epitaxy (MBE) for a specific density of QDs is a multidimensional optimization challenge, usually addressed through time-consuming and iterative trial-and-error. Here, we report a real-time feedback control method to realize the growth of QDs with arbitrary density, which is fully automated and intelligent. We develop a machine learning (ML) model named 3D ResNet 50 trained using reflection high-energy electron diffraction (RHEED) videos as input instead of static images and providing real-time feedback on surface morphologies for process control. As a result, we demonstrate that ML from previous growth could predict the post-growth density of QDs, by successfully tuning the QD densities in near-real time from 1.5 × 10

Identifiers

PMID38553435
PMCPMC10980817

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.