Evidence map›Paper›PMID 38543451›Full record

ReviewPolymers2024

Progress in Polyhedral Oligomeric Silsesquioxane (POSS) Photoresists: A Comprehensive Review across Lithographic Systems.

Zaoxia Wen, Xingyu Liu, Wenxiu Chen, Ruolin Zhou, Hao Wu, Yongmei Xia, Lianbin Wu

Abstract readReview
PubMed Full text at PMC Publisher
In one paragraph

Review in Polymers, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.

0numbers the graph read from it
0cells of the map it votes in
3citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

3 citing papers in PubMed.

  1. Review
  2. Article
  3. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

7 authors.

Zaoxia WenCollege of Material Chemistry and Chemical Engineering, Key Laboratory of Organosilicon Chemistry and Material Technology of Zhejiang Province, Key Laboratory of Organosilicon Material Technology, Ministry of Education, Hangzhou Normal University, Hangzhou 311121, China.
Xingyu LiuCollege of Material Chemistry and Chemical Engineering, Key Laboratory of Organosilicon Chemistry and Material Technology of Zhejiang Province, Key Laboratory of Organosilicon Material Technology, Ministry of Education, Hangzhou Normal University, Hangzhou 311121, China.
Wenxiu ChenCollege of Material Chemistry and Chemical Engineering, Key Laboratory of Organosilicon Chemistry and Material Technology of Zhejiang Province, Key Laboratory of Organosilicon Material Technology, Ministry of Education, Hangzhou Normal University, Hangzhou 311121, China.
Ruolin ZhouCollege of Material Chemistry and Chemical Engineering, Key Laboratory of Organosilicon Chemistry and Material Technology of Zhejiang Province, Key Laboratory of Organosilicon Material Technology, Ministry of Education, Hangzhou Normal University, Hangzhou 311121, China.
Hao WuCollege of Material Chemistry and Chemical Engineering, Key Laboratory of Organosilicon Chemistry and Material Technology of Zhejiang Province, Key Laboratory of Organosilicon Material Technology, Ministry of Education, Hangzhou Normal University, Hangzhou 311121, China.
Yongmei XiaCollege of Material Chemistry and Chemical Engineering, Key Laboratory of Organosilicon Chemistry and Material Technology of Zhejiang Province, Key Laboratory of Organosilicon Material Technology, Ministry of Education, Hangzhou Normal University, Hangzhou 311121, China.
Lianbin WuCollege of Material Chemistry and Chemical Engineering, Key Laboratory of Organosilicon Chemistry and Material Technology of Zhejiang Province, Key Laboratory of Organosilicon Material Technology, Ministry of Education, Hangzhou Normal University, Hangzhou 311121, China.ORCID 0000-0003-3403-2142

Funding

The Department of Scientific and Technology of Zhejiang Province LGG22E030022
6 · The paper itself

Abstract

This paper offers a comprehensive overview of the polyhedral oligomeric silsesquioxane (POSS) and POSS-based composites within the realm of photoresist resin. The study involves a systematic exploration and discussion of the contributions made by POSS across various lithographic systems, with specific emphasis on critical parameters such as film formation, sensitivity, resolution, solubility, and edge roughness. These lithographic systems encompass X-ray lithography (XRL), deep ultraviolet nanoimprint lithography (DUV-NIL), extreme ultraviolet lithography (EUV), and guided self-assembled lithography (DSA). The principal objective of this paper is to furnish valuable insights into the development and utilization of POSS-based photoresist materials in diverse lithographic contexts.

Indexed as

lithographic systemsphotoresist resinpolyhedral oligomeric silsesquioxane (POSS)POSS-based photoresist

Identifiers

PMID38543451
PMCPMC10974684

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.