Evidence map›Paper›PMID 38542655›Full record

ArticleMicromachines2024

Multi-Step Mechanical and Thermal Homogenization for the Warpage Estimation of Silicon Wafers.

Zhouyi Xiang, Min Chen, Yonghui Deng, Songhua Huang, Sanli Liu, Ji Li

Abstract read
In one paragraph

Article in Micromachines, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Zhouyi XiangSchool of Advanced Technology, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China.ORCID 0009-0000-9065-6342
Min ChenSchool of Advanced Technology, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China.ORCID 0000-0002-3122-6788
Yonghui DengZINSIGHT Technology (Shanghai) Co., Ltd., Shanghai 201114, China.
Songhua HuangSchool of Advanced Technology, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China.ORCID 0000-0002-4874-7299
Sanli LiuSchool of Advanced Technology, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China.
Ji LiKey Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 210096, China.ORCID 0000-0003-1166-9204

Funding

National Natural Science Foundation of China 61974025 and 61504024the National Key Laboratory of Science and Technology on Vacuum Electronics 6142807190510the XJTLU Research Development Fund RDF-17-02-44, RDF-SP-122
6 · The paper itself

Abstract

In response to the increasing demand for high-performance capacitors, with a simultaneous emphasis on minimizing their physical size, a common practice involves etching deep vias and coating them with functional layers to enhance operational efficiency. However, these deep vias often cause warpages during the processing stage. This study focuses on the numerical modeling of wafer warpage that occurs during the deposition of three thin layers onto these vias. A multi-step mechanical and thermal homogenization approach is proposed to estimate the warpage of the silicon wafer. The efficiency and accuracy of this numerical homogenization strategy are validated by comparing detailed and homogenized models. The multi-step homogenization method yields more accurate results compared to the conventional direct homogenization method. Theoretical analysis is also conducted to predict the shape of the wafer warpage, and this study further explores the impact of via depth and substrate thickness.

Indexed as

integrated capacitormulti-step mechanical homogenizationmulti-step thermal homogenizationwafer warpage

Identifiers

PMID38542655
PMCPMC10972272

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.