Evidence map›Paper›PMID 38542608›Full record

ArticleMicromachines2024

Material Design of Ultra-Thin InN/GaN Superlattices for a Long-Wavelength Light Emission.

Leilei Xiang, Enming Zhang, Wenyu Kang, Wei Lin, Junyong Kang

Open access · goldAbstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Micromachines, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
0.3field-weighted citation impact, top 49% of its field
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed, 1 citations in OpenAlex.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

5 authors at 1 institution in 1 country.

Leilei XiangDepartment of Electronics, Department of Physics, Department of Chemistry, Tan Kah Kee Innovation Laboratory, Engineering Research Center of Micro-Nano Optoelectronic Materials, Devices at Ministry of Education, Fujian Key Laboratory of Semiconductor Materials and Application, Xiamen University, Xiamen 361005, China.ORCID 0009-0004-6765-9480
Enming ZhangDepartment of Electronics, Department of Physics, Department of Chemistry, Tan Kah Kee Innovation Laboratory, Engineering Research Center of Micro-Nano Optoelectronic Materials, Devices at Ministry of Education, Fujian Key Laboratory of Semiconductor Materials and Application, Xiamen University, Xiamen 361005, China.
Wenyu KangDepartment of Electronics, Department of Physics, Department of Chemistry, Tan Kah Kee Innovation Laboratory, Engineering Research Center of Micro-Nano Optoelectronic Materials, Devices at Ministry of Education, Fujian Key Laboratory of Semiconductor Materials and Application, Xiamen University, Xiamen 361005, China.ORCID 0000-0003-1593-751X
Wei LinDepartment of Electronics, Department of Physics, Department of Chemistry, Tan Kah Kee Innovation Laboratory, Engineering Research Center of Micro-Nano Optoelectronic Materials, Devices at Ministry of Education, Fujian Key Laboratory of Semiconductor Materials and Application, Xiamen University, Xiamen 361005, China.
Junyong KangDepartment of Electronics, Department of Physics, Department of Chemistry, Tan Kah Kee Innovation Laboratory, Engineering Research Center of Micro-Nano Optoelectronic Materials, Devices at Ministry of Education, Fujian Key Laboratory of Semiconductor Materials and Application, Xiamen University, Xiamen 361005, China.ORCID 0000-0003-0865-2954
Xiamen University · CN

Funding

Fundamental Research Funds for the Central Universities 20720220036Key Scientific and Technological Program of Xiamen 3502Z20231016National Key R&D Program of China 2022YFB3605401
6 · The paper itself

Abstract

GaN heterostructure is a promising material for next-generation optoelectronic devices, and Indium gallium nitride (InGaN) has been widely used in ultraviolet and blue light emission. However, its applied potential for longer wavelengths still requires exploration. In this work, the ultra-thin InN/GaN superlattices (SL) were designed for long-wavelength light emission and investigated by first-principles simulations. The crystallographic and electronic properties of SL were comprehensively studied, especially the strain state of InN well layers in SL. Different strain states of InN layers were applied to modulate the bandgap of the SL, and the designed InN/GaN heterostructure could theoretically achieve photon emission of at least 650 nm. Additionally, we found the SL had different quantum confinement effects on electrons and holes, but an efficient capture of electron-hole pairs could be realized. Meanwhile, external forces were also considered. The orbital compositions of the valence band maximum (VBM) were changed with the increase in tensile stress. The transverse electric (TE) mode was found to play a leading role in light emission in normal working conditions, and it was advantageous for light extraction. The capacity of ultra-thin InN/GaN SL on long-wavelength light emission was theoretically investigated.

Indexed as

charge injectionfirst-principles simulationgallium nitride heterostructurestrain regulation

Identifiers

PMID38542608
PMCPMC10972001
OpenAlexW4392357045

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.