Evidence map›Paper›PMID 38542577›Full record

ReviewMicromachines2024

Review of the AlGaN/GaN High-Electron-Mobility Transistor-Based Biosensors: Structure, Mechanisms, and Applications.

Chenbi Li, Xinghuan Chen, Zeheng Wang

Open access · goldAbstract readReview
In one paragraph

Review in Micromachines, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 7 papers.

0numbers the graph read from it
0cells of the map it votes in
7citing papers in PubMed
8.7field-weighted citation impact, top 1% of its field
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

7 citing papers in PubMed, 28 citations in OpenAlex.

  1. Article
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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

3 authors at 2 institutions in 2 countries.

Chenbi LiDepartment of ICU, 3201 Hospital, Hanzhong 723000, China.
Xinghuan ChenThe China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China.ORCID 0000-0002-8294-1730
Zeheng WangManufacturing, CSIRO, Lindfield, NSW 2070, Australia.ORCID 0000-0002-6994-1234
China Electronic Product Reliability and Environmental Test Institute · CNCSIRO Manufacturing · AU

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Due to its excellent material performance, the AlGaN/GaN high-electron-mobility transistor (HEMT) provides a wide platform for biosensing. The high density and mobility of two-dimensional electron gas (2DEG) at the AlGaN/GaN interface induced by the polarization effect and the short distance between the 2DEG channel and the surface can improve the sensitivity of the biosensors. The high thermal and chemical stability can also benefit HEMT-based biosensors' operation under, for example, high temperatures and chemically harsh environments. This makes creating biosensors with excellent sensitivity, selectivity, reliability, and repeatability achievable using commercialized semiconductor materials. To synthesize the recent developments and advantages in this research field, we review the various AlGaN/GaN HEMT-based biosensors' structures, operations mechanisms, and applications. This review will help new researchers to learn the basic information about the topic and aid in the development of next-generation of AlGaN/GaN HEMT-based biosensors.

Indexed as

AlGaN/GaNbiomoleculebiosensorHEMTmedical sensor

Identifiers

PMID38542577
PMCPMC10972248
OpenAlexW4392238509

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.