ArticleNature communications2024
High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics.
Article in Nature communications, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 17 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
17 citing papers in PubMed, 102 citations in OpenAlex.
- Ferroelectric Transistors: from Materials Innovation to Intelligent Electronic Systems.Advanced materials (Deerfield Beach, Fla.) · 2026Review
- Te/FeNanomaterials (Basel, Switzerland) · 2026Article
- Designable van der Waals Crystal for Artificial Neuronal Cell Mimicking.Advanced materials (Deerfield Beach, Fla.) · 2026Article
- Amphibian-inspired neuromorphic dynamic vision systems based on ferroelectric field-effect transistor.Nature communications · 2026Article
- Towards Artificial Intelligence Hardware With 3D Integrated Ferroelectric Transistors.Small (Weinheim an der Bergstrasse, Germany) · 2026Article
- Symmetry-Guided Functional Pathways of Intercalation-Free Rhombohedral (ACS applied materials & interfaces · 2026Article
- Flexible active-matrix micro-LED display with 1T-1FeMFET architecture featuring scaling-limit-free design.Nature communications · 2026Article
- Ferroelectrics Hybrids: Harnessing Multifunctionality of 2D Semiconductors in the Post-Moore Era.Advanced materials (Deerfield Beach, Fla.) · 2026Review
- A reconfigurable photosensitive split-floating-gate memory for neuromorphic computing and nonlinear activation.Nature communications · 2026Article
- Synaptic Plasticity Engineering for Neural Precision, Temporal Learning, and Scalable Neuromorphic Systems.Nano-micro letters · 2026Review
- High-throughput design of optoelectronic-ferroelectric heterostructure from materials to sensor-memory-computing devices.National science review · 2026Article
- InMolecules (Basel, Switzerland) · 2025Review
- Localized Electric Field Tailoring to Balance Voltage Reliability, Current Density, and High-Frequency Performance of AlGaN/GaN HEMTs.Micromachines · 2025Article
- Physical correlation between stochasticity and process-induced damage in ferroelectric memory devices.Nano convergence · 2025Article
- Buried-Gate Flexible CNT FET with HZO Dielectric on Mica Substrate.Nanomaterials (Basel, Switzerland) · 2025Article
- Ferroelectric NAND for efficient hardware bayesian neural networks.Nature communications · 2025Article
- Flexible Organic Field-Effect Transistor (OFET) Based 2T0C DRAM Cells with 2-Bit Operation and Extended Retention.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
12 authors at 2 institutions in 1 country.
Funding
Abstract
With the development of wearable devices and hafnium-based ferroelectrics (FE), there is an increasing demand for high-performance flexible ferroelectric memories. However, developing ferroelectric memories that simultaneously exhibit good flexibility and significant performance has proven challenging. Here, we developed a high-performance flexible field-effect transistor (FeFET) device with a thermal budget of less than 400 °C by integrating Zr-doped HfO
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.