Evidence map›Paper›PMID 38526608›Full record

ArticleDiscover nano2024

High-density via RRAM cell with multi-level setting by current compliance circuits.

Yu-Cheng Hsieh, Yu-Cheng Lin, Yao-Hung Huang, Yu-Der Chih, Jonathan Chang, Chrong-Jung Lin, Ya-Chin King

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Discover nano, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

7 authors.

Yu-Cheng HsiehInstitute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan.
Yu-Cheng LinInstitute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan.
Yao-Hung HuangInstitute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan.
Yu-Der ChihDesign Technology Platform, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan.
Jonathan ChangDesign Technology Platform, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan.
Chrong-Jung LinInstitute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan.
Ya-Chin KingInstitute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan. ycking@ee.nthu.edu.tw.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

In this work, multi-level storage in the via RRAM has been first time reported and demonstrated with the standard FinFET CMOS logic process. Multi-level states in via RRAM are achieved by controlling the current compliance during set operations. The new current compliance setting circuits are proposed to ensure stable resistance control when one considers cells under the process variation effect. The improved stability and tightened distributions on its multi-level states on via RRAM have been successfully demonstrated.

Indexed as

MLCNVMRRAM

Identifiers

PMID38526608
PMCPMC10963676

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.