ArticleHeliyon2024
Deposition of ZnO thin films with different powers using RF magnetron sputtering method: Structural, electrical and optical study.
Article in Heliyon, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
4 citing papers in PubMed.
- Band gap engineering in Al, Cu, N and Al/Cu Co-doped ZnO thin films: experimental study and quantum machine learning prediction.Scientific reports · 2026Article
- Selected Deposition Techniques and the Effect of Doping on the Properties of Thin ZnO Films: A Literature Review.Materials (Basel, Switzerland) · 2026Review
- Nanostructured Thin Films: Properties, Fabrication and Applications-A Short Review.Nanomaterials (Basel, Switzerland) · 2025Review
- Evaluation of the interface of metallic-coated biodegradable polymeric stents with prokaryotic and eukaryotic cells.Bioactive materials · 2025Article
Corrections and comments
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Authors and funding
3 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Zinc Oxide thin films at room temperature with good crystallinity quality have been deposited at different Radio Frequency powers. Magnetron sputtering technique has been carried out on glass and oriented Si(100) substrates. The film structure has been characterized by X-ray Diffraction (XRD) and MicroRaman spectroscopy, which possesses a wurtzite structure with (002) preferential orientation selecting suitable conditions. Scanning electron microscope (SEM) and atomic force microscopy (AFM) have been utilized to determine the films surface morphology. The stoichiometry has been verified by Energy dispersive X-ray spectroscopy (EDX) analysis. The optical behaviors of the deposited films have been characterized by Ultraviolet Visible (UV-Vis) (optical transmittance measurements) as well as by Photoluminance characterization. Electrical properties, Current-Voltage (I-V) and Capacitance-Voltage (C-V) have been studied in details for Zinc Oxide on Silicon film that deposited at different Radio Frequency power. The high transparency, electrical behavior and smooth surface allow to use these Zinc Oxide films in photovoltaic cells and optoelectronics application.
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Registered trials
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