ArticleNature communications2024
Defect-induced helicity dependent terahertz emission in Dirac semimetal PtTe
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Article in Nature communications, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.
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6 citing papers in PubMed.
- Gate-Tunable Floquet Weyl Photon Emission from Topological Dirac Semimetal CdAdvanced materials (Deerfield Beach, Fla.) · 2026Article
- Defect-Functionalization-Mediated Tunneling Drives Nonlinear Photoemission in Perovskites.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Higher odd-order nonlinear Hall effect in magnetic topological insulator Mn(BiNature communications · 2026Article
- Large-area non-stoichiometric phase transition in transition metal chalcogenide films.Nature materials · 2026Article
- Anisotropic phonon dynamics in Dirac semimetal PtTeLight, science & applications · 2024Article
- Light-induced giant enhancement of nonreciprocal transport at KTaONature communications · 2024Article
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Authors and funding
21 authors.
Zhongqiang Chen *Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China.
Hongsong Qiu *Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, MOE Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances, Nanjing University, 210093, Nanjing, China.ORCID http://orcid.org/0000-0002-5914-192X
Xinjuan Cheng *Department of Applied Physics, MIIT Key Laboratory of Semiconductor Microstructures and Quantum Sensing, Nanjing University of Science and Technology, 210094, Nanjing, China.
Jizhe CuiSchool of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China.
Zuanming JinTerahertz Technology Innovation Research Institute, Terahertz Spectrum and Imaging Technology Cooperative Innovation Center, University of Shanghai for Science and Technology, 200093, Shanghai, China.ORCID http://orcid.org/0000-0002-9686-7965
Da TianResearch Institute of Superconductor Electronics, School of Electronic Science and Engineering, MOE Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances, Nanjing University, 210093, Nanjing, China.
Xu ZhangJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China.
Kankan XuJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China.
Ruxin LiuJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China.
Wei NiuJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China.ORCID http://orcid.org/0000-0002-4331-0928
Liqi ZhouCollege of Engineering and Applied Sciences, Nanjing University, 210093, Nanjing, China.ORCID http://orcid.org/0000-0002-6498-4518
Tianyu QiuState Key Laboratory of Solid State Microstructures, School of Physics, Nanjing University, 210093, Nanjing, China.
Yequan ChenJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China.
Caihong ZhangResearch Institute of Superconductor Electronics, School of Electronic Science and Engineering, MOE Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances, Nanjing University, 210093, Nanjing, China.
Xiaoxiang XiState Key Laboratory of Solid State Microstructures, School of Physics, Nanjing University, 210093, Nanjing, China.ORCID http://orcid.org/0000-0002-8685-9267
Fengqi SongState Key Laboratory of Solid State Microstructures, School of Physics, Nanjing University, 210093, Nanjing, China.ORCID http://orcid.org/0000-0001-6266-6551
Rong YuSchool of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China.ORCID http://orcid.org/0000-0003-1687-3597
Xuechao ZhaiDepartment of Applied Physics, MIIT Key Laboratory of Semiconductor Microstructures and Quantum Sensing, Nanjing University of Science and Technology, 210094, Nanjing, China. zhaixuechao@njust.edu.cn.ORCID http://orcid.org/0000-0002-5860-5593
Biaobing JinResearch Institute of Superconductor Electronics, School of Electronic Science and Engineering, MOE Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances, Nanjing University, 210093, Nanjing, China. bbjin@nju.edu.cn.ORCID http://orcid.org/0000-0001-9506-8355
Rong ZhangJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China. rzhang@nju.edu.cn.ORCID http://orcid.org/0000-0003-0015-6331
Xuefeng WangJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China. xfwang@nju.edu.cn.ORCID http://orcid.org/0000-0002-3472-7895
Funding
National Natural Science Foundation of China (National Science Foundation of China) 62027807National Natural Science Foundation of China (National Science Foundation of China) 62322115National Natural Science Foundation of China (National Science Foundation of China) 62374088 and 12074193National Natural Science Foundation of China (National Science Foundation of China) 92161201 and 12025404National Natural Science Foundation of China (National Science Foundation of China) T2394473, T2394470, 62274085, 11874203 and 61822403
Abstract
Nonlinear transport enabled by symmetry breaking in quantum materials has aroused considerable interest in condensed matter physics and interdisciplinary electronics. However, achieving a nonlinear optical response in centrosymmetric Dirac semimetals via defect engineering has remained a challenge. Here, we observe the helicity dependent terahertz emission in Dirac semimetal PtTe
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