ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2024
Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO
Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
3 citing papers in PubMed.
- Wafer-Scale Manufacturing and Crack-Free Transferring of GaN-Based Membranes for Flexible Optoelectronics.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
- Two-dimensional buffer breaks substrate limit in III-nitrides epitaxy.Science advances · 2025Article
- Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiOAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024Article
Corrections and comments
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Authors and funding
15 authors.
Funding
Abstract
The realization of high quality (0001) GaN on Si(100) is paramount importance for the monolithic integration of Si-based integrated circuits and GaN-enabled optoelectronic devices. Nevertheless, thorny issues including large thermal mismatch and distinct crystal symmetries typically bring about uncontrollable polycrystalline GaN formation with considerable surface roughness on standard Si(100). Here a breakthrough of high-quality single-crystalline GaN film on polycrystalline SiO
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Registered trials
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