ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2024
Highly Efficient Room-Temperature Spin-Orbit-Torque Switching in a Van der Waals Heterostructure of Topological Insulator and Ferromagnet.
Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 7 papers.
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Who cites it
7 citing papers in PubMed.
- Nanoelectronics with Two-Dimensional Magnets.Nano letters · 2026Review
- AC Current-Driven Magnetization Switching and Nonlinear Hall Rectification in a Magnetic Topological Insulator.Advanced materials (Deerfield Beach, Fla.) · 2026Article
- Tunable unconventional spin orbit torque magnetization dynamics in van der Waals heterostructures.Nature communications · 2025Article
- Orbital Coupling and Spin Textures of Fe/Pd Thin Films Grown on Si Substrate with High Magnetic Fields.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
- Article
- Field-Free Spin-Orbit Torque Switching in Janus Chromium Dichalcogenides.Nano letters · 2024Article
- Highly Efficient Room-Temperature Spin-Orbit-Torque Switching in a Van der Waals Heterostructure of Topological Insulator and Ferromagnet.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024Article
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Authors and funding
12 authors.
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Abstract
All-Van der Waals (vdW)-material-based heterostructures with atomically sharp interfaces offer a versatile platform for high-performing spintronic functionalities at room temperature. One of the key components is vdW topological insulators (TIs), which can produce a strong spin-orbit-torque (SOT) through the spin-momentum locking of their topological surface state (TSS). However, the relatively low conductance of the TSS introduces a current leakage problem through the bulk states of the TI or the adjacent ferromagnetic metal layers, reducing the interfacial charge-to-spin conversion efficiency (q
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