ArticleInnovation (Cambridge (Mass.))2024
Schottky infrared detectors with optically tunable barriers beyond the internal photoemission limit.
Article in Innovation (Cambridge (Mass.)), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 10 papers.
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Who cites it
10 citing papers in PubMed.
- Mid-Infrared Sensing and Ultrafast Photoresponse in Silicon-Based Plasmonic Detectors.ACS photonics · 2026Article
- Highly Efficient Conductivity Modulation via Stacked Multi-Gate Graphene Ambipolar Transistors.Nanomaterials (Basel, Switzerland) · 2026Article
- An FPGA-Based Reconfigurable Accelerator for Real-Time Affine Transformation in Industrial Imaging Heterogeneous SoC.Sensors (Basel, Switzerland) · 2026Article
- Investigation of Electrical Behavior of Au/Ti/AlN/Si Schottky Diode via Gaussian Distribution Barrier Modeling.ACS omega · 2025Article
- Enabling highly efficient infrared silicon photodetectors via disordered metasurfaces with upconversion nanoparticles.Science advances · 2025Article
- Electrical-gain-assisted circularly polarized photodetection based on chiral plasmonic metamaterials.Light, science & applications · 2025Article
- Emerging Thermal Detectors Based on Low-Dimensional Materials: Strategies and Progress.Nanomaterials (Basel, Switzerland) · 2025Review
- IR Sensors, Related Materials, and Applications.Sensors (Basel, Switzerland) · 2025Review
- Photovoltage-Driven Photoconductor Based on HorizontalNanomaterials (Basel, Switzerland) · 2024Article
- The Application of Multi-Parameter Multi-Modal Technology Integrating Biological Sensors and Artificial Intelligence in the Rapid Detection of Food Contaminants.Foods (Basel, Switzerland) · 2024Article
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Authors and funding
7 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Internal photoemission is a prominent branch of the photoelectric effect and has emerged as a viable method for detecting photons with energies below the semiconductor bandgap. This breakthrough has played a significant role in accelerating the development of infrared imaging in one chip with state-of-the-art silicon techniques. However, the performance of these Schottky infrared detectors is currently hindered by the limit of internal photoemission; specifically, a low Schottky barrier height is inevitable for the detection of low-energy infrared photons. Herein, a distinct paradigm of Schottky infrared detectors is proposed to overcome the internal photoemission limit by introducing an optically tunable barrier. This device uses an infrared absorbing material-sensitized Schottky diode, assisted by the highly adjustable Fermi level of graphene, which subtly decouples the photon energy from the Schottky barrier height. Correspondingly, a broadband photoresponse spanning from ultraviolet to mid-wave infrared is achieved, with a high specific detectivity of 9.83 × 10
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Registered trials
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