Evidence map›Paper›PMID 38493313›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2024

Defect Passivation of 2D Semiconductors by Fixating Chemisorbed Oxygen Molecules via h-BN Encapsulations.

Jin-Woo Jung, Hyeon-Seo Choi, Young-Jun Lee, Youngjae Kim, Takashi Taniguchi, Kenji Watanabe, Min-Yeong Choi, Jae Hyuck Jang, Hee-Suk Chung, Dohun Kim and 2 more

Open access · goldAbstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
2.0field-weighted citation impact, top 10% of its field
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed, 17 citations in OpenAlex.

  1. Article
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

12 authors at 5 institutions in 2 countries.

Jin-Woo JungDepartment of Physics and Chemistry, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, South Korea.
Hyeon-Seo ChoiDepartment of Physics and Chemistry, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, South Korea.
Young-Jun LeeDepartment of Physics and Chemistry, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, South Korea.
Youngjae KimSchool of Physics, Korea Institute for Advanced Study (KIAS), Seoul, 02455, South Korea.
Takashi TaniguchiInternational Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, 305-0044, Japan.
Kenji WatanabeResearch Center for Functional Materials, National Institute for Materials Science, Tsukuba, 305-0044, Japan.
Min-Yeong ChoiElectron Microscopy and Spectroscopy Team, Korea Basic Science Institute, Daejeon, 34133, South Korea.
Jae Hyuck JangElectron Microscopy and Spectroscopy Team, Korea Basic Science Institute, Daejeon, 34133, South Korea.
Hee-Suk ChungElectron Microscopy and Spectroscopy Team, Korea Basic Science Institute, Daejeon, 34133, South Korea.
Dohun KimDepartment of Physics and Chemistry, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, South Korea.
Youngwook KimDepartment of Physics and Chemistry, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, South Korea.
Chang-Hee ChoDepartment of Physics and Chemistry, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, South Korea.ORCID https://orcid.org/0000-0003-0014-5464
Daegu Gyeongbuk Institute of Science and Technology · KRKorea Basic Science Institute · KRKorea Institute for Advanced Study · KRNational Institute for Materials Science · JPChungnam National University · KR

Funding

DGIST R&D Program 23-CoE-NT-01DGIST R&D Program 23-HRHR+-03JSPS 19H05790JSPS 20H00354JSPS 21H05233KIAS Grant PG088601MOTIE 20010542National Research Foundation of Korea 2019R1A2C1088525National Research Foundation of Korea 2020R1C1C1006914National Research Foundation of Korea RS-2023-00236798
6 · The paper itself

Abstract

Hexagonal boron nitride (h-BN) is a key ingredient for various 2D van der Waals heterostructure devices, but the exact role of h-BN encapsulation in relation to the internal defects of 2D semiconductors remains unclear. Here, it is reported that h-BN encapsulation greatly removes the defect-related gap states by stabilizing the chemisorbed oxygen molecules onto the defects of monolayer WS

Indexed as

chemisorptiondefect passivationhexagonal boron nitrideoxygen moleculetransition metal dichalcogenide

Identifiers

PMID38493313
PMCPMC11165525
OpenAlexW4392895387

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.