Evidence map›Paper›PMID 38491732›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2024

Synergistically Modulating Conductive Filaments in Ion-Based Memristors for Enhanced Analog In-Memory Computing.

Jinyong Wang, Yujing Ren, Ze Yang, Qiaoya Lv, Yu Zhang, Mingyue Zhang, Tiancheng Zhao, Deen Gu, Fucai Liu, Baoshan Tang and 2 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Thermally Oxidized Memristor and 1T1R Integration for Selector Function and Low-Power Memory.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024
    Article
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

12 authors.

Jinyong WangSchool of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China.
Yujing RenDepartment of Chemical and Biomolecular Engineering, National University of Singapore, Singapore, 117585, Singapore.
Ze YangDepartment of Microelectronics and Integrated Circuit, School of Electronic Science and Engineering, Xiamen University, Xiamen, 361005, P. R. China.
Qiaoya LvDepartment of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore.
Yu ZhangDepartment of Electronic Science and Technology, Harbin Institute of Technology, Harbin, 150001, P. R. China.
Mingyue ZhangDepartment of Chemical and Biomolecular Engineering, National University of Singapore, Singapore, 117585, Singapore.
Tiancheng ZhaoSchool of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China.
Deen GuSchool of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China.
Fucai LiuSchool of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China.
Baoshan TangDepartment of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore.
Weifeng YangDepartment of Microelectronics and Integrated Circuit, School of Electronic Science and Engineering, Xiamen University, Xiamen, 361005, P. R. China.
Zhiqun LinDepartment of Chemical and Biomolecular Engineering, National University of Singapore, Singapore, 117585, Singapore.ORCID https://orcid.org/0000-0003-3158-9340

Funding

National University of Singapore : NUS StartupXiamen Double-Hundred-Talent Program
6 · The paper itself

Abstract

Memristors offer a promising solution to address the performance and energy challenges faced by conventional von Neumann computer systems. Yet, stochastic ion migration in conductive filament often leads to an undesired performance tradeoff between memory window, retention, and endurance. Herein, a robust memristor based on oxygen-rich SnO2 nanoflowers switching medium, enabled by seed-mediated wet chemistry, to overcome the ion migration issue for enhanced analog in-memory computing is reported. Notably, the interplay between the oxygen vacancy (Vo) and Ag ions (Ag

Indexed as

in‐memory computingion migrationmemristoroxygen vacanciestunable filaments

Identifiers

PMID38491732
PMCPMC11165545

What OpenQuestion holds

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LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.