Evidence map›Paper›PMID 38477425›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2024

Interface Modulation for the Heterointegration of Diamond on Si.

Xing Li, Li Wan, Chaonan Lin, Wen-Tao Huang, Jing Zhou, Jie Zhu, Xun Yang, Xigui Yang, Zhenfeng Zhang, Yandi Zhu and 6 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.

0numbers the graph read from it
0cells of the map it votes in
3citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

3 citing papers in PubMed.

  1. Grain Boundary Enabled Diamond Memristor.Advanced materials (Deerfield Beach, Fla.) · 2026
    Article
  2. Plastic deformation in nanodiamonds.Nature communications · 2026
    Article
  3. Interface Modulation for the Heterointegration of Diamond on Si.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

16 authors.

Xing LiHenan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450000, China.
Li WanHenan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450000, China.
Chaonan LinHenan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450000, China.
Wen-Tao HuangHenan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450000, China.
Jing ZhouSchool of Energy and Power Engineering, Key Lab of Ocean Energy Utilization and Energy Conservation of Ministry of Education, Dalian University of Technology, Dalian, 116024, China.
Jie ZhuSchool of Energy and Power Engineering, Key Lab of Ocean Energy Utilization and Energy Conservation of Ministry of Education, Dalian University of Technology, Dalian, 116024, China.
Xun YangHenan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450000, China.
Xigui YangHenan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450000, China.
Zhenfeng ZhangHenan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450000, China.
Yandi ZhuHenan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450000, China.
Xiaoyan RenHenan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450000, China.
Ziliang JinState Key Laboratory of Lunar and Planetary Sciences, Macau University of Science and Technology, Taipa, Macao, 999078, China.
Lin DongHenan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450000, China.
Shaobo ChengHenan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450000, China.ORCID https://orcid.org/0000-0001-8791-5315
Shunfang LiHenan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450000, China.
Chongxin ShanHenan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450000, China.

Funding

National Key Research and Development Program of China 2022YFB3608604National Natural Science Foundation of Henan Province 222300420077National Natural Science Foundation of Henan Province 222300420297National Natural Science Foundation of Henan Province 222301420037Natural Science Foundation of China 12274371Natural Science Foundation of China 52072345Natural Science Foundation of China 62027816Natural Science Foundation of China 62271450Natural Science Foundation of China U21A2070Science and Technology Major Project of Henan Province 221100230300Science and Technology on Plasma Physics Laboratory JCKYS2021212010
6 · The paper itself

Abstract

Along with the increasing integration density and decreased feature size of current semiconductor technology, heterointegration of the Si-based devices with diamond has acted as a promising strategy to relieve the existing heat dissipation problem. As one of the heterointegration methods, the microwave plasma chemical vapor deposition (MPCVD) method is utilized to synthesize large-scale diamond films on a Si substrate, while distinct structures appear at the Si-diamond interface. Investigation of the formation mechanisms and modulation strategies of the interface is crucial to optimize the heat dissipation behaviors. By taking advantage of electron microscopy, the formation of the epitaxial β-SiC interlayer is found to be caused by the interaction between the anisotropically sputtered Si and the deposited amorphous carbon. Compared with the randomly oriented β-SiC interlayer, larger diamond grain sizes can be obtained on the epitaxial β-SiC interlayer under the same synthesis condition. Moreover, due to the competitive interfacial reactions, the epitaxial β-SiC interlayer thickness can be reduced by increasing the CH

Indexed as

electron microscopyheterointegrationinterfacial structureMPCVD diamondβ‐SiC

Identifiers

PMID38477425
PMCPMC11199985

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.