ArticleNanomaterials (Basel, Switzerland)2024
Multi-Layer Palladium Diselenide as a Contact Material for Two-Dimensional Tungsten Diselenide Field-Effect Transistors.
Article in Nanomaterials (Basel, Switzerland), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
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2 citing papers in PubMed.
- Special Issue: 2D Layered Nanomaterials and Heterostructures for Electronics, Optoelectronics, and Sensing.Nanomaterials (Basel, Switzerland) · 2025Article
- All van der Waals Semiconducting PtSeNano letters · 2024Article
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9 authors.
Funding
Abstract
Tungsten diselenide (WSe2) has emerged as a promising ambipolar semiconductor material for field-effect transistors (FETs) due to its unique electronic properties, including a sizeable band gap, high carrier mobility, and remarkable on-off ratio. However, engineering the contacts to WSe2 remains an issue, and high contact barriers prevent the utilization of the full performance in electronic applications. Furthermore, it could be possible to tune the contacts to WSe2 for effective electron or hole injection and consequently pin the threshold voltage to either conduction or valence band. This would be the way to achieve complementary metal-oxide-semiconductor devices without doping of the channel material.This study investigates the behaviour of two-dimensional WSe2 field-effect transistors with multi-layer palladium diselenide (PdSe2) as a contact material. We demonstrate that PdSe2 contacts favour hole injection while preserving the ambipolar nature of the channel material. This consequently yields high-performance
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