Evidence map›Paper›PMID 38407030›Full record

ArticleNano letters2024

Identification and Structural Characterization of Twisted Atomically Thin Bilayer Materials by Deep Learning.

Haitao Yang, Ruiqi Hu, Heng Wu, Xiaolong He, Yan Zhou, Yizhe Xue, Kexin He, Wenshuai Hu, Haosen Chen, Mingming Gong and 4 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nano letters, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.

0numbers the graph read from it
0cells of the map it votes in
5citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

5 citing papers in PubMed.

  1. Article
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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

14 authors.

Haitao YangKey Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi Key Laboratory of High-Orbits-Electron Materials and Protection Technology for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China.
Ruiqi HuDepartment of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, United States.ORCID 0000-0003-0596-1217
Heng WuState Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Xiaolong HeKey Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi Key Laboratory of High-Orbits-Electron Materials and Protection Technology for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China.
Yan ZhouState Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.ORCID 0000-0001-6470-6991
Yizhe XueKey Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi Key Laboratory of High-Orbits-Electron Materials and Protection Technology for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China.
Kexin HeKey Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi Key Laboratory of High-Orbits-Electron Materials and Protection Technology for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China.
Wenshuai HuKey Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi Key Laboratory of High-Orbits-Electron Materials and Protection Technology for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China.
Haosen ChenKey Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi Key Laboratory of High-Orbits-Electron Materials and Protection Technology for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China.
Mingming GongSchool of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China.
Xin ZhangState Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.ORCID 0000-0002-1450-2525
Ping-Heng TanState Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.ORCID 0000-0001-6575-1516
Eduardo R HernándezInstituto de Ciencia de Materiales de Madrid (ICMM-CSIC), 28049 Madrid, Spain.ORCID 0000-0002-1164-2856
Yong XieKey Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi Key Laboratory of High-Orbits-Electron Materials and Protection Technology for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China.ORCID 0000-0001-7904-664X

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Two-dimensional materials are expected to play an important role in next-generation electronics and optoelectronic devices. Recently, twisted bilayer graphene and transition metal dichalcogenides have attracted significant attention due to their unique physical properties and potential applications. In this study, we describe the use of optical microscopy to collect the color space of chemical vapor deposition (CVD) of molybdenum disulfide (MoS

Indexed as

Deep learningOpenCVRamanTransition metal dichalcogenides (TMDs)Twist angles

Identifiers

PMID38407030
PMCPMC10921996

What OpenQuestion holds

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LicenceCC BY
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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.