Evidence map›Paper›PMID 38372805›Full record

ReviewNano-micro letters2024

Recent Advances in In-Memory Computing: Exploring Memristor and Memtransistor Arrays with 2D Materials.

Hangbo Zhou, Sifan Li, Kah-Wee Ang, Yong-Wei Zhang

Abstract readReview
In one paragraph

Review in Nano-micro letters, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 28 papers.

0numbers the graph read from it
0cells of the map it votes in
28citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

28 citing papers in PubMed.

  1. Review
  2. Epitaxial BiAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Article
  3. Self-Powered Neuromorphic Systems Based on Tribotronics Synaptic Devices.Small (Weinheim an der Bergstrasse, Germany) · 2026
    Review
  4. Review
  5. Article
  6. Review
  7. Article
  8. Review
  9. Artificial Neuron Based on Electrical Anisotropy from WSeAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Article
  10. Cation-Driven Valence Change Mechanism in 2D AgCrSAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Article
  11. Article
  12. Article
  13. Article
  14. Review
  15. Article
  16. Li-Well ZnO Memtransistors: High Reliability for Neuromorphic Applications.Advanced materials (Deerfield Beach, Fla.) · 2026
    Article
  17. Article
  18. Article
  19. Review
  20. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

4 authors.

Hangbo Zhou *Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore, 138632, Republic of Singapore.
Sifan Li *Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Republic of Singapore.
Kah-Wee AngDepartment of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Republic of Singapore. eleakw@nus.edu.sg.
Yong-Wei ZhangInstitute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore, 138632, Republic of Singapore. zhangyw@ihpc.a-star.edu.sg.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

The conventional computing architecture faces substantial challenges, including high latency and energy consumption between memory and processing units. In response, in-memory computing has emerged as a promising alternative architecture, enabling computing operations within memory arrays to overcome these limitations. Memristive devices have gained significant attention as key components for in-memory computing due to their high-density arrays, rapid response times, and ability to emulate biological synapses. Among these devices, two-dimensional (2D) material-based memristor and memtransistor arrays have emerged as particularly promising candidates for next-generation in-memory computing, thanks to their exceptional performance driven by the unique properties of 2D materials, such as layered structures, mechanical flexibility, and the capability to form heterojunctions. This review delves into the state-of-the-art research on 2D material-based memristive arrays, encompassing critical aspects such as material selection, device performance metrics, array structures, and potential applications. Furthermore, it provides a comprehensive overview of the current challenges and limitations associated with these arrays, along with potential solutions. The primary objective of this review is to serve as a significant milestone in realizing next-generation in-memory computing utilizing 2D materials and bridge the gap from single-device characterization to array-level and system-level implementations of neuromorphic computing, leveraging the potential of 2D material-based memristive devices.

Indexed as

2D materialsCrossbar arrayIn-memory computingMemristorsMemtransistors

Identifiers

PMID38372805
PMCPMC10876512

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.