Evidence map›Paper›PMID 38363877›Full record

ArticleNano letters2024

Room Temperature Negative Differential Resistance with High Peak Current in MoS

Jung Ho Kim, Soumya Sarkar, Yan Wang, Takashi Taniguchi, Kenji Watanabe, Manish Chhowalla

Open access · hybridAbstract read
In one paragraph

Article in Nano letters, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
2.7field-weighted citation impact, top 6% of its field
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed, 23 citations in OpenAlex.

  1. Article
  2. Gallium Nitride Semiconductor Resonant Tunneling Transistor.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors at 2 institutions in 2 countries.

Jung Ho KimDepartment of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom.ORCID 0000-0002-7884-2414
Soumya SarkarDepartment of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom.ORCID 0000-0002-9715-9004
Yan WangDepartment of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom.ORCID 0000-0001-9241-3512
Takashi TaniguchiResearch Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.ORCID 0000-0002-1467-3105
Kenji WatanabeResearch Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.ORCID 0000-0003-3701-8119
Manish ChhowallaDepartment of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom.ORCID 0000-0002-8183-4044
University of Cambridge · GBNational Institute for Materials Science · JP

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Two-dimensional transition metal dichalcogenide (2D TMD) semiconductors allow facile integration of p- and n-type materials without a lattice mismatch. Here, we demonstrate gate-tunable n- and p-type junctions based on vertical heterostructures of MoS

Indexed as

2D materialsh-BN tunnel barrierMoS2/WSe2 heterostructurenegative differential resistancetunnel transistor

Identifiers

PMID38363877
PMCPMC10906070
OpenAlexW4391885635

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.