ArticleScientific reports2024
Exploration of underlap induced high-k spacer with gate stack on strain channel cylindrical nanowire FET for enriched performance.
Article in Scientific reports, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
4 citing papers in PubMed, 13 citations in OpenAlex.
- Voltage compensation of manufacturing errors applied to artificial band gaps in nanoscale transistor.Scientific reports · 2026Article
- Role of Si/dielectric interface traps on the reliability of tree-shaped complementary FETs for sub-3 nm technology nodes.Scientific reports · 2026Article
- Design and analysis of high-k wrapped underlap induced GaN multi-channel GAA nanosheet FET for enhanced performance with cut-off frequency in THz range.Scientific reports · 2025Article
- Exploration and Analysis of GaN-Based FETs with Varied Doping Concentration in Nano Regime for Biosensing Application.Biosensors · 2025Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
3 authors at 2 institutions in 2 countries.
Funding
No grant is acknowledged in the PubMed record.
Abstract
This research explores a comprehensive examination of gate underlap incorporated strained channel Cylindrical Gate All Around Nanowire FET having enriched performances above the requirement of the 2 nm technology node of IRDS 2025. The device installs a combination of strain engineering based quantum well barrier system in the channel region with high-k spacers sandwiching the device underlaps and stack high-k gate-oxide. The underlaps are prone to parasitic resistance and various short channel effects (SCEs) hence, are sandwiched by HfO
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.