ArticleNanomaterials (Basel, Switzerland)2024
Electrostatically Doped Junctionless Graphene Nanoribbon Tunnel Field-Effect Transistor for High-Performance Gas Sensing Applications: Leveraging Doping Gates for Multi-Gas Detection.
Article in Nanomaterials (Basel, Switzerland), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
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4 citing papers in PubMed, 13 citations in OpenAlex.
- Engineering thermoelectric performance in copper-doped graphene nanoribbons for energy-aware electronics.Scientific reports · 2026Article
- Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoSMicromachines · 2024Article
- WSSensors (Basel, Switzerland) · 2024Article
- Performance Projection of Vacuum Gate Dielectric Doping-Free Carbon Nanoribbon/Nanotube Field-Effect Transistors for Radiation-Immune Nanoelectronics.Nanomaterials (Basel, Switzerland) · 2024Article
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Authors and funding
4 authors at 4 institutions in 5 countries.
Funding
No grant is acknowledged in the PubMed record.
Abstract
In this paper, a new junctionless graphene nanoribbon tunnel field-effect transistor (JLGNR TFET) is proposed as a multi-gas nanosensor. The nanosensor has been computationally assessed using a quantum simulation based on the self-consistent solutions of the mode space non-equilibrium Green's function (NEGF) formalism coupled with the Poisson's equation considering ballistic transport conditions. The proposed multi-gas nanosensor is endowed with two top gates ensuring both reservoirs' doping and multi-gas sensing. The investigations have included the I
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