Evidence map›Paper›PMID 38272914›Full record

ArticleNature communications2024

Effective electrical manipulation of a topological antiferromagnet by orbital torques.

Zhenyi Zheng, Tao Zeng, Tieyang Zhao, Shu Shi, Lizhu Ren, Tongtong Zhang, Lanxin Jia, Youdi Gu, Rui Xiao, Hengan Zhou and 7 more

Abstract read
In one paragraph

Article in Nature communications, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 9 papers.

0numbers the graph read from it
0cells of the map it votes in
9citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

9 citing papers in PubMed.

  1. Article
  2. Article
  3. Article
  4. Article
  5. Article
  6. Article
  7. Article
  8. Article
  9. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

17 authors.

Zhenyi Zheng *Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.
Tao Zeng *Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.
Tieyang Zhao *Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.ORCID http://orcid.org/0000-0001-9357-3323
Shu ShiDepartment of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.
Lizhu RenDepartment of Electrical and Computer Engineering, National University of Singapore, Singapore, 117575, Singapore.ORCID http://orcid.org/0000-0001-7521-2006
Tongtong ZhangCentre for Micro- and Nano-Electronics (CMNE), School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore, Singapore.
Lanxin JiaDepartment of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.ORCID http://orcid.org/0009-0004-9329-6396
Youdi GuDepartment of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.
Rui XiaoDepartment of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.
Hengan ZhouDepartment of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.
Qihan ZhangDepartment of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.ORCID http://orcid.org/0009-0009-0212-4350
Jiaqi LuDepartment of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.
Guilei WangBeijing Superstring Academy of Memory Technology, Beijing, 100176, China.
Chao ZhaoBeijing Superstring Academy of Memory Technology, Beijing, 100176, China.
Huihui LiBeijing Superstring Academy of Memory Technology, Beijing, 100176, China. lihh04@163.com.ORCID http://orcid.org/0000-0001-8318-384X
Beng Kang TayCentre for Micro- and Nano-Electronics (CMNE), School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore, Singapore. ebktay@ntu.edu.sg.ORCID http://orcid.org/0000-0002-3776-3648
Jingsheng ChenDepartment of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore. msecj@nus.edu.sg.ORCID http://orcid.org/0000-0003-3188-2803

Funding

Ministry of Education - Singapore (MOE) MOE-T2EP50121-0001Ministry of Education - Singapore (MOE) MOE-T2EP50121-0011Ministry of Education - Singapore (MOE) MOE Tier 1: 22-4888-A0001
6 · The paper itself

Abstract

The electrical control of the non-trivial topology in Weyl antiferromagnets is of great interest for the development of next-generation spintronic devices. Recent studies suggest that the spin Hall effect can switch the topological antiferromagnetic order. However, the switching efficiency remains relatively low. Here, we demonstrate the effective manipulation of antiferromagnetic order in the Weyl semimetal Mn

Identifiers

PMID38272914
PMCPMC10811228

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.