ArticleNature communications2024
Giant tunnelling electroresistance in atomic-scale ferroelectric tunnel junctions.
Article in Nature communications, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 13 papers.
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Who cites it
13 citing papers in PubMed.
- Atomic-Scale Measurement of Lattice Distortion in Sm-Doped Bismuth-Based Oxides.Small methods · 2026Article
- Stable Analog Weight Programming in Single-Crystalline van der Waals Ferroelectric Transistors for Reliable Computing-in-Memory.Advanced materials (Deerfield Beach, Fla.) · 2026Article
- Hybrid ferroelectric-ionic memristive hardware for high scalability in-memory computing.Nature communications · 2026Article
- Ferroelectric Devices for In-Memory and In-Sensor Computing.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Review
- S-atom dislocation-induced room-temperature ferroelectricity in two-dimensional α-MnS semiconductor.Nature communications · 2026Article
- Nonlinear Optical Response in Layer-Stacked Gallenene with Ferroelectric Polarization.Advanced materials (Deerfield Beach, Fla.) · 2025Article
- Physical correlation between stochasticity and process-induced damage in ferroelectric memory devices.Nano convergence · 2025Article
- Subangstrom ion beam engineering of buried ultrathin oxides for scalable quantum computing.Science advances · 2025Article
- Giant switchable ferroelectric photovoltage in double-perovskite epitaxial films through chemical negative strain.Science advances · 2025Article
- Flexible BaTiOACS applied materials & interfaces · 2025Article
- Assessment of functional performance in self-rectifying passive crossbar arrays utilizing sneak path current.Scientific reports · 2024Article
- Growth of emergent simple pseudo-binary ferroelectrics and their potential in neuromorphic computing devices.Materials horizons · 2024Review
- Out-of-plane polarization induces a picosecond photoresponse in rhombohedral stacked bilayer WSeBeilstein journal of nanotechnology · 2024Article
Corrections and comments
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Authors and funding
9 authors.
Funding
Abstract
Ferroelectric tunnel junctions are promising towards high-reliability and low-power non-volatile memories and computing devices. Yet it is challenging to maintain a high tunnelling electroresistance when the ferroelectric layer is thinned down towards atomic scale because of the ferroelectric structural instability and large depolarization field. Here we report ferroelectric tunnel junctions based on samarium-substituted layered bismuth oxide, which can maintain tunnelling electroresistance of 7 × 10
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Registered trials
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