ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2024
High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond.
Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
3 citing papers in PubMed.
- Ultra-High Sensitivity, Wide-Range Thermometry Based on High-Quality Microscale Diamond Resonators.Advanced materials (Deerfield Beach, Fla.) · 2025Article
- Oxygen-Assisted B-N Codoping Enables Shallow BNResearch (Washington, D.C.) · 2025Article
- High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
3 authors.
Funding
Abstract
Diamond holds the highest figure-of-merits among all the known semiconductors for next-generation electronic devices far beyond the performance of conventional semiconductor silicon. To realize diamond integrated circuits, both n- and p-channel conductivity are required for the development of diamond complementary metal-oxide-semiconductor (CMOS) devices, as those established for semiconductor silicon. However, diamond CMOS has never been achieved due to the challenge in n-type channel MOS field-effect transistors (MOSFETs). Here, electronic-grade phosphorus-doped n-type diamond epilayer with an atomically flat surface based on step-flow nucleation mode is fabricated. Consequently, n-channel diamond MOSFETs are demonstrated. The n-type diamond MOSFETs exhibit a high field-effect mobility around 150 cm
Indexed as
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.